Keynote

9:30 - 10:10

Phase-Change Memory Cell Architectures and Storage Class Memory Applications

Fabio Pellizzer¹ and Agostino Pirovano²

¹ Micron Technology, Boise (Idaho), United States
² Micron Technology, Vimercate (MB), Italy

F - 01

10:10 - 10:35

3D Nand Flash Memories: Array Architectures and Scaling/Reliability Challenges

Rino Micheloni

Microsemi Corporation, Vimercate, Italy

F - 02

10:35 - 11:00

RRAM device operation investigated using in-situ TEM

Masashi Arita, Atsushi Tsurumaki-Fukuchi, Yasuo Takahashi

Hokkaido University, Sapporo, Japan

F - 03

11:00 - 11:25

A Multiscale Modeling Approach for the Simulation of OxRRAM devices

Andrea Padovani^1,2, Luca Larcher³

¹ MDLab s.r.l. Reggio Emilia, Italy ²MDLSoft Inc.,Santa Clara
³ Università di Modena e Reggio Emilia, Italy

PC - 01

11:40 - 12:05

Spatially Resolved Thermometry of PCM Devices

Eilam Yalon, Sanchit Deshmukh, Miguel Muñoz Rojo, and Eric Pop

Stanford University, USA

PC - 02

11:05 - 12:30

A Unified Phase Change Memory Model

Ali Gokirmak¹, Zack Woods¹, Jacob Scoggin¹, Adam Cywar¹, Nadim Ka’nan¹, L’Hacene Adnane1, Sadid Muneer¹, Gokhan Bakan^1,2, Faruk Dirisaglik^1,3, Nicholas Williams¹, Azer Faraclas¹, Mustafa Akbulut¹, Zoila Jurado¹, Lindsay Sullivan¹, Kadir Cil¹, Chung Lam⁴, Helena Silva¹

¹ University of Connecticut, Storrs, CT USA
² Atilim  University, Ankara, Turkey
³ Eskisehir Osmangazi University, Eskisehir, Turkey
⁴ IBM T. J. Watson Research Center, USA

PC - 03

12:30 - 12:55

Switching Performance of the GeTe/Bi2Te3 Superlattice Based iPCM

Kirill V. Mitrofanov¹, Yuta Saito^1,2, Noriyuki Miyata¹, Paul Fons¹, Alexander V. Kolobov¹ and Junji Tominaga¹

¹ National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan
² Cambridge University, United Kingdom Corresponding

CB - 01

1:05-2:30

Enhancement of CBRAM Performance by Controlled Formation of a Hourglass-Shaped Filament 

Attilio Belmonte¹, Ludovic Goux¹, Jiyong Woo^1,2, Umberto Celano¹, Augusto Redolfi¹, Sergiu Clima¹, Gouri Sankar Kar¹

¹ imec, Leuven, Belgium
² Pohang University of Science and Technology, Pohang, South Korea

CB - 02

2:30-2:55

Tradeoff and perspectives for filamentary RRAM memories

Etienne Nowak, Cécile Nail, Alessandro Grossi, Gabriel Molas, Carlo Cagli, Luca Perniola

CEA, LETI, Grenoble, France

CB - 03

2:55-3:20

Mapping the Metal-Insulator Transition in a NbO₂ Selector with Scanning TEM Ebic

B. C. Regan¹, Toyanath Joshi², Matthew Mecklenburg³, Brian Zutter¹, Pavel Borisov², and David Lederman^2,4, William A. Hubbard¹

¹ University of California, Los Angeles, USA
² West Virginia University, Morgantown, USA
³ University of Southern California, Los Angeles, USA
⁴University of California, Santa Cruz, USA

Keynote

8:30-9:10

Embedded STT-MRAM Technology toward Mass Production

G. H. Koh, Y. J. Song, S. O. Park, K. H. Hwang, G. Jeong, K. P. Lee, and H. K. Kang

Samsung Electronics Co. Ltd, Hwasung, Korea

MR - 01

9:10-9:35

Atom-thick tungsten engineered perpendicular magnetic tunnel junctions for large density STT-MRAM

Wenlong Cai¹, Mengxing Wang¹, Kaihua Cao¹, Jiaqi Zhou¹, Shouzhong Peng¹, Huaiwen Yang¹, Anni Cao¹, Jiaqi Wei¹, Wang Kang¹, Jerzy Wrona², Berthold Ocker², Juergen Langer², Albert Fert^1,3, Weisheng Zhao^1,

¹ Beihang University, Beijing, China.
² Singulus Technologies, Kahl am Main, Germany.
³ CNRS, Univ. Paris-Sud, Universit´e Paris-Saclay, France.

MR - 02

9:35-10:00

Ferroelectric Materials based on Hafnium Oxide for Non-Volatile Memories

T. Mikolajick^1,2, T. Schenk¹, T. Mittmann¹, M. Hoffmann¹, B.Max², C. Richter¹, M. Pešić¹, F. Fengler¹, H. Mulaosmanovic¹ , M.-H. Park¹, S. Slesazeck¹, U. Schroeder¹, J. Müller³, P Polakowski³, S. Müller⁴,  R.Materlik⁵, A. Kersch⁵

¹ NaMLab gGmbH, Dresden, Germany.
² TU Dresden, Germany.
³ Fraunhofer IPMS-CNT, Dresden, Germany.
⁴ FMC GmbH, Dresden, Germany.
⁵ Munich University of Applied Sciences, Germany.

MR - 03

10:00-10:25

Universal pathway of ferroelectric phase evolution in doped HfO2

Akira Toriumi¹, Lun Xu¹, and Shinji Migita²

¹ University of Tokyo, Japan
² AIST, Tsukuba, Japan

PC - 04

10:40-11:05

Phase Change Materials by Design: The Mystery of Resonance Bonding

M. Wuttig

RWTH Aachen University of Technology, Germany

PC - 05

11:05-11:30

Confined Phase Change Memory for M-type Storage Class Memory

W. Kim¹, M. BrightSky¹, T. Masuda², S. Kim¹, R. Bruce¹, F. Carta¹, G. Fraczak¹, A. Ray¹, Y. Zhu¹, K. Suu² and C. Lam¹

¹IBM T. J. Watson Research Center, USA
²ULVAC, Inc., Shizuoka, Japan

PC - 06

11:30-11:55

Ti-Sb-Te Phase Change Material and Memory Chip

Zhitang, Song

Chinese Academy of Sciences, Shanghai, China.

PC - 07

11:55-12:20

Self-healing of a confined phase change memory device with a metallic surfactant layer

Yujun, Xie¹, Wanki, Kim², Yerin Kim³ Matt, BrightSky², Chung, Lam², Yu Zhu², Judy.J Cha¹

¹ Yale University, New Haven, United States
² IBM T. J. Watson Research Center, USA

RR - 01

1:30-1:55

Uncovering switching and Failure Mechanisms in Memristive Devices by In-Operando Sprectromicroscopy

Regina Dittmann, Christoph Bäumer

Forschungszentrum Jülich GmbH, Germany

RR - 02

1:55-2:20

Measuring and Analyzing Random Telegraph Noise in Nanoscale Devices: The Case of Resistive Random Access Memories

Francesco Maria Puglisi

Università di Modena e Reggio Emilia, Italy

RR - 03

2:20-2:45

Optical Detection and Modulation with Atomic-Scale Conductive Bridging RAM (CBRAM) Cells

Mathieu Luisier¹, Alexandros Emboras¹, Fabian Ducry¹, Samuel Andermatt¹, Bojun Cheng¹, Ping Ma¹, Yannick Salamin¹, Thomas Schimmel³, and Jürg Leuthold¹

¹ ETH Zurich, Switzerland
² Karlsruhe Institute of Technology, Germany

Keynote

8:30-9:10

Applications of phase-change memory in brain-inspired computing

Abu Sebastian

IBM Research, Zurich, Switzerland

N - 01

9:10-9:35

HfO₂ RRAM as Electronic Synapses for Neuromorphic Computing

S. Spiga¹, S. Brivio¹, E. Covi¹, J, Frascaroli¹, D. Conti^2,3, R. George,² M.V. Nair², C. Ricciardi,³ G. Indiveri²

¹ CNR - IMM, Agrate Brianza, Italy
² University of Zürich and ETH, Switzerland
³ DISAT - Applied Science and Technology Department, Torino, Italy

N - 02

9:35-10:00

A Large-scale Neuromorphic Chip with Distributed PCRAM

Jing Pei¹, Zhenzhi Wu¹, Wei He¹, Zhitang Song², Luping Shi¹

¹ Tsinghua University, Beijing, 100084, P. R. China
² Chinese Academy of Sciences, Shanghai, China

N - 03

10:00-10:25

Controlling Ionic Transport in RRAM for Neuromorphic Computing Applications

Jihang Lee, Yeonjoo Jeong, Wei D. Lu 

University of Michigan, USA

RR - 04

10:40-11:05

Memory Advanced Demonstrator (MAD) for BEOL NVM benchmark and assessment

Jean Coignus, Carlo Cagli, Gilles Reimbold, Etienne Nowak and Luca Perniola

CEA, LETI, Grenoble, France

RR - 05

11:05-11:30

Reduction of Cycle-to-Cycle Variability in ReRAM by Artificially-Induced Filamentary Refresh

K. Ohmori¹, A. Shinoda¹, K. Kawai², Z. Wei², T. Mikawa², and R. Hasunuma³

¹ Device Lab Inc., Ibaraki, Japan
² Panasonic Semiconductor Solutions, Kyoto, Japan
³University of Tsukuba, Ibaraki, Japan

RR - 06

11:30-11:55

Role of Electron and Hole Injection in Electroforming of SiO₂ and HfO₂ RRAM Cells

Alexander Shluger^1,2, David Z. Gao¹, Jack Strand¹, Moloud Kaviani², Adnan Mehonic¹, and Anthony Kenyon¹

¹ University College London, UK
² Tohoku University, Sendai, Japan

RR - 07

11:55-12:20

Modelling of Resistive Switching Devices based on the Valence Change Mechanism

S. Menzel¹, C. Funck², C. La Torre², A. Marchewka², K. Fleck², C. Bäumer¹, V. Rana¹, S. Hoffmann-Eifert¹_, R. Dittmann¹_, R. Waser^1,2

¹ Forschungszentrum Jülich, Germany
² RWTH Aachen, Germany

NA - 01

1:30-1:55

16Mb Resistive Random Access Memory Chip Implementation and its Applications

Huaqiang Wu, Dong Wu, Bin Gao, Yachuan Pang, Ning Deng and He Qian

Tsinghua University, Beijing, China

NA - 02

1:55-2:20

Threshold Switching and Electro-Formation in TaO_x-Based RRAM

Marek Skowronski¹, Dasheng Li¹, Yuanzhi Ma¹, Jonathan Goodwill¹, James A. Bain¹ and A. A. Herzing² 

¹ Carnegie Mellon university, Pittsburgh, USA
² National Inst. Standards and Technology, Gaithersburg, USA

NA - 03

2:20-2:45

Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM

Milan Pešić¹, Michael Hoffmann¹, Claudia Richter¹, Stefan Slesazeck¹, Thomas Mikolajick^1,2, Uwe Schroeder¹

¹ NaMLab gGmbH, Dresden, Germany
² Technische Universität Dresden, Germany