The Non-Volatile Memory Technology Symposium is an international forum establishes a platform for the discussion of state of the art and emerging memory technologies, such as FLASH, FeRAM, PCRAM, RRAM or MRAM. Talks and poster sessions span from fundamental physical understanding to large-scale applications. Within this framework not only traditional but also neuromorphic concepts are taken into account.



Conference Chairs

Matthias Wuttig (RWTH University Aachen, Germany)


Rainer Waser (RWTH University Aachen, Germany)

Technical Chairs

Ilya karpov (Intel, USA)
Rong Zhao (Singapore University of Technology & Design, Singapore)


Lacaita Andrea (Politecnico di Milano, Italy)
Roberto Bez (Ifoundry, Italy)
Dongmin Chen (4DS, USA)
Hongsik Jeong (Yonsei University)
Takeo Ohta (Ovonic phase change institute, Japan)
Stuart S.P. Parkin (IBM-Stanford Spintronic Science & Applications Center (SpinAps), USA)
Zhitang Song (Shanghai Institute of Microsystem and Information Technology, CAS, China)
Jian-Ping Wang (University of Minnesota, USA)
Kevin Zhang (Intel, USA)
Yiran Chen (University of Pittsburgh, USA)
Daehwan Kang (Samsung, Korea)
Chung Lam (IBM Research, USA)
Bo Liu (Zhejiang university, China)
Wei Lu (University of Michigan – Ann Arbor, USA)
Hang-Ting Lue (Macronix International Co., Ltd., Taiwan)
Ken Takeuchi (University of Tokyo, Japan)
Daisaburo Takashima (Toshiba, Japan)
Jordi Sune (Universitat Autònoma de Barcelona, Spain)
Barbara De Salvo (CEA-LETI, France)
Scott Sills (Micron, USA)
Hyunchul Sohn (Yonsei University, Korea)
C-J Richard Shi (University of Washington, USA)
Luc Thomas (TDK-Headway Technologies, USA)
Junji Tominaga (National Institute of Advanced Industrial Science & Technology, Japan)
Yuan Xie (University of California, Santa Barbara, USA)
Jian-Hua Yang (University of Massachusetts, USA)
Jimmy Zhu (Carnegie Mellon University, USA)

Local Committee Members

Julia Rittich (RWTH University Aachen, Germany)
Henning Hollermann (RWTH University Aachen, Germany)