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Poster Sessions

 

The poster contributions are divided in two poster sessions. The splitting is done by last
names in alphabetical order. Please put up your poster on the date of the session between
9:00 AM and 2:30 PM and take it down until 6 PM, right after the session.

1. Poster Session (contributions with presenter-last names beginning with A-O)
Wednesday August 30, 3:30 – 5:00 PM

2. Poster Session (contributions with presenter-last names beginning with P-Z)
Thursday August 31, 3:00 – 5:00 PM

Awards will be given for the top three posters regarding presentation, technical quality and impact. Members of the conference committee will judge the posters during the session.

Posters should be of DIN-A0 size in portrait orientation.

 

Poster Session – 1

August 30       2017      Wednesday                 3:00 – 5:00 PM

 

P1 - 01

 

High Speed and High-Area Efficiency Non-Volatile Look-Up Table Design

 

Rana Alhalabi1, Gregory Di Pendina2, Etienne Nowak1, Ioan-lucian Prejbeanu2, Luca Perniola1

 

1CEA LETI, Grenoble, France

2Univ. Grenoble Alpes, France

 

 

P1 - 02

 

Controlling growth of Materials and structure for resistive memory using combinatorial synthesis and high-throughput screening methodologies

 

Mabkhoot, Alsaiari1, Brian, Hayden2

 

1 Najran University, Sharurah, KSA

2 Southampton University, Southampton, UK

 

 

P1 - 03

 

Cross Effects of Endurance and Retention Time in STT-RAM based Last Level Cache

 

Fatemeh Arezoomand1, Mahdi Fazeli1, Mahmood Fathy1, Mohammad Taher Hallaj Shoushtari 2

 

1 Iran University of Science & Technology, Tehran, Iran

2 Science and Research branch of Islamic Azad University, Tehran, Iran

 

 

P1 - 04

 

A Multi-Memristive Synaptic Architecture and Experimental Demonstrations

 

I. Boybat1, 2, M. Le Gallo1, 3, S. R. Nandakumar1, 4, T. Moraitis1, T. Tuma1, Y. Leblebici2, A. Sebastian1 and E. Eleftheriou1

 

1 IBM – Research Zurich, Rüschlikon, Switzerland    2 EPFL, Lausanne, Switzerland

3 ETH Zurich, Zurich, Switzerland    4 NJIT, Newark, NJ, USA

 

 

P1 - 05

 

EXPLOITING THE POTENTIAL OF ADVANCED PHASE CHANGE MATERIAL EPITAXIAL STRUCTURES

 

Raffaella Calarco, Stefano Cecchi, Jos E. Boschker, Eugenio Zallo

 

Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany

 

 

P1 - 06

 

Improvement of Electrical Characteristics of SiO2/ZrO2 Hybrid tunnel Oxide for Charge Trap Flash Memory

 

Jaeho Choi1,2, Ilsub Jung1

 

1 Colleague of Information and Communication Engineering, Sungkyunkwan University, Suwon, Korea

2 Department of Process Development 2 Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi, Korea

 

 

P1 - 07

 

Nanosized conducting filaments formed by atomic-scale defects in Fe-doped SrTiO3 thin-film resistive switching memories

 

Hongchu Du1,2, Chun-Lin Jia1,3,4, Annemarie Koehl3, Juri Barthel1,2, Regina Dittmann3, Rainer Waser3,5,6, and Joachim Mayer1,2,6

 

1 Forschungszentrum Jülich GmbH, Juelich, Germany

2RWTH Aachen University, Aachen, Germany

3Peter Grünberg Institute, Jülich, Germany

4Xi’an Jiaotong University, Xi'an, China

5RWTH Aachen University, Aachen, Germany

6Jülich-Aachen Research Alliance, (JARA-FIT), Jülich-Aachen , Germany

 

 

P1 - 08

 

Endurance Prediction and Error Reduction in NAND Flash Using Machine Learning

 

Barry Fitzgerald1, Damien Hogan2, Jeannie Fitzgerald2, Joe Sullivan1, Conor Ryan3

 

1 Limerick Institute of Technology, Limerick, Ireland

2 NVMdurance Ltd, Limerick, Ireland

3 University of Limerick, Limerick, Ireland

 

 

P1 - 09

 

Field-enhanced Ion Transport Revisited

 

Annalena R. Genreith-Schriever, Roger A. De Souza

 

RWTH Aachen University, Aachen, Germany

 

 

P1 - 10

 

Investigation of oxygen vacancy formation and migration in HfO2 from density functional theory

 

Marta Gibertini, Daniel Wortmann, Gustav Bihlmayer, Shigeru Tsukamoto,

 Stefan Blügel

 

Forschungszentrum Jülich and JARA, Jülich, Germany

 


 

P1 - 11

 

Stoichiometry-dependence of resistive switching in amorphous gallium oxide

 

Philipp Hein, Manfred Martin

 

RWTH Aachen University, Institute of Physical Chemistry, Aachen, Germany

 

 

P1 - 12

 

Switching behaviour of ZrOx-based bi-layer and tri-layer resistive memory

 

Ruomeng Huang1, Xingzhao Yan1, Reza Kashitiban2, Richard Beanland2, Katrina A Morgan1, Martin D B Charlton1 , C H (Kees) de Groot1

 

1 University of Southampton, Southampton, UK  2 University of Warwick, Coventry, UK

 

 

P1 - 13

 

SCANNING TEM EBIC OF SWITCHING IN Ti/HfO2/Pt VALENCE CHANGE MEMORY

 

William A. Hubbard, Jared Lodico, B.C. Regan

 

1Department of Physics & Astronomy and California NanoSystems Institute, University of California, Los Angeles, CA, USA

 


 

P1 - 14

 

Highly reliable controllability of quadruple-level-cell operation in HfO2 based resistive switching device

 

Gun Hwan Kim, Ji Woon Choi, Bo Keun Park, Jeong Hwan Han, Taek-Mo Chung, and Young Kuk Lee

 

Center for Thin-Film Materials, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-Ro, Yuseong-Gu, Daejeon 34114, Republic of Korea

 

 

P1 - 15

 

INNOVATIVE GeS2/Sb2Te3 BASED PHASE-CHANGE MEMORY FOR LOW POWER APPLICATIONS

 

Julia Kluge1, 2, 3, Anthonin Verdy2, Gabriele Navarro2, Serge Blonkowski1,

Véronique Sousa2, Philippe Kowalczyk2, Mathieu Bernard2, Nicolas Bernier2, Guillaume Bourgeois2, Niccolò Castellani2, Pierre Noé2 and Luca Perniola2

 

1   STMicroelectronics, Crolles, France.

2   CEA, LETI, Grenoble, France. 3 IMEP-LAHC, Minatec/INPG, 3Grenoble, France

 


 

P1 - 16

 

Theoretical Analysis of Methyl-Ammine Lead-Tin Iodide based Resistive Memory

 

Yongwoo Kwon1, Hayoun Shim1, Kyoung-Hwan Min1, Nayoung Park2, Pil-Ryung Cha2

 

1 Hongik University, Seoul, Korea

2 Kookmin University, Seoul, Korea

 

 

P1 - 17

 

Charge Transition of Oxygen Vacancy during Resistive Switching in Oxide-RRAM

 

Jihang Lee,1,2 William Schell,1 Xiaojian Zhu,1Emmanouil Kioupakis,2 Wei D. Lu1

 

1 Department of Electrical Engineering and Computer Science, University of Michigan,

2 Department of Materials Science and Engineering, University of Michigan,

Ann Arbor, 48109, United States

 

 

P1 - 18

 

Infrared Near-field Spectroscopy of Free Charge Carriers at Grain Boundaries in Sr1-xLaxTiO3 Ceramics on the nm-Scale

 

Martin Lewin1,2, Fabian Gaussmann2, Jochen Wüppen2, Sebastian Nyga2, Bernd Jungbluth2, Alexander Schwedt4,5, Rainer Waser3, Joachim Mayer4,5
and Thomas Taubner1,2

 

1RWTH Aachen University, Aachen, Germany

2Fraunhofer Institute for Laser Technology (ILT), Aachen, Germany

3RWTH Aachen University, Juelich Aachen Research Alliance, Aachen, Germany

4RWTH Aachen University, Aachen, Germany

5Ernst Ruska-Centre and JARA, Forschungszentrum Jülich GmbH, Jülich, Germany

 

 

P1 - 19

 

3D-Xpoint block device deployed in hyperscale infrastructure

 

Ping Zhou, Shu Li

 

Alibaba Infrastructure ServiceAlibaba Group

 

 

P1 - 20

 

Forming-free TaOx-based ReRAM Stack Prepared by Magnetron Sputtering Method

 

Yusuke Miyaguchi, Shun Manita, Hyung-Woo Ahn, Kazushi Fuse, Shunpei Ota and Takehito Jimbo

 

ULVAC, Inc. Susono, Shizuoka, Japan

 

P1 - 21

Investigation of behaviour of cubic to hexagonal phase transition in Ge-Sb-Te based chalcogenide on silicon nitride passivation

 

Jinsu, Oh, Byeong-Seon, An, and Cheol-Woong, Yang

 

Sungkyunkwan University, Suwon, Korea

 

 

Poster Session – 2

August 31       2017      Thursday     3:00 – 5:00 PM

 

P2 - 01

 

Study on Insulator - metal transition characteristics of NbO2 for selector device

 

Jaehyuk Park, Euijun Cha and Hyunsang Hwang*

 

Pohang University of Science and Technology, Pohang, Korea

 

 

P2 - 02

 

MOTARO - a Fault-Tolerant NOR Flash Memory Controller for Embedded Systems

 

Patryk Skoncej, Oliver Schrape

 

IHP, Frankfurt (Oder), Germany

 

 

P2 - 03

 

FORMING-FREE, BIPOLAR RESISTIVE SWITCHING IN ZINC FERRITE THIN FILMS

 

Senthilkumar Rajarathinam1, Neeraj Panwar2, Pankaj Kumbhare2, Udayan Ganguly2 and N. Venkataramani1

 

1 Department of Metallurgical Engineering and Materials Science,

2 Indian Institute of Technology Bombay, Mumbai, India

 

 

P2 - 04

 

High Temperature Retention Characteristics of TaOx ReRAM

 

Archana Dangwal1, 3, Wonjoo Kim1, Dirk J. Wouters2, Thomas Mikolajick3, Rainer Waser1, 2, Vikas Rana1

 

1 Forschungszentrum Jülich GmbH, Jülich, Germany

2IWE 2, RWTH Aachen University, Aachen, German

3Faculty of Electrical and Computer Engineering, TU Dresden Corresponding

 

 

 

P2 - 05

 

Tuning the local conductivity of ALD-grown TiO2 ReRAM cells by Au nanoparticles

 

Christian Rodenbücher1, Nabeel Aslam1, Hehe Zhang1,

Hongchu Du2, Dirk Mayer1, Susanne Hoffmann-Eifert1

 

1 Peter Grünberg Institute and JARA-FIT, Forschungszentrum Jülich, Germany

2 Ernst Ruska-Centre, Forschungszentrum Jülich, Germany

 

 

P2 - 06

 

Crystallization of Phase-Change Materials from Molecular Dynamics Simulations

 

Ider Ronneberger1, Wei Zhang4, Martin Salinga1,3, Abu Sebastian3, Matthias Wuttig1 and Riccardo Mazzarello1

 

1 RWTH Aachen University, Aachen, Germany

3 IBM Research-Zurich, Rüschlikon, Switzerland  

4 Xi'an Jiaotong University, Shaanxi, China

 

P2 - 07

 

DIFFERENT TRANSPORT PROPERTIES AT VERY LOW TEMPERATURES BETWEEN SUBSTOICHIOMETRIC TaOx IN ReRAM CONDUCTIVE FILAMENTS AND IN THIN FILMS

 

Carlos M. M. Rosário1,2, Bo Thöner2, Alexander Schönhals2, Stephan Menzel3, Matthias Wuttig2, Rainer Waser2,3, Nikolai A. Sobolev1,4, Dirk J. Wouters2

 

1 University of Aveiro, Aveiro, Portugal

2 RWTH Aachen University, Aachen, Germany

3 Peter Grünberg Institute and JARA-FIT, Forschungszentrum Jülich, Germany

4 National University of Science and Technology “MISiS”, Moscow, Russia

 

 

P2 - 08

 

Boundary formation in SrTiO3-TiO2 solid solutions

 

Konstantin Rushchanskii, Stefan Blügel, Marjana Ležaić

 

Forschungszentrum Jülich and JARA, Jülich, Germany

 

 

P2 - 09

 

ELECTRICAL CONDUCTION IN AMORPHOUS PHASE CHANGE MATERIALS

 

Martin Salinga 1,2

 

1 IBM Research - Zurich, Rüschlikon, Switzerland

2 RWTH Aachen University, Aachen, Germany

 

P2 - 10

 

Ultrafast threshold-switching dynamics in Ge2Sb2Te5 phase change memory device

 

Nishant, Saxena1, Chao, Chen2, Matthias, Wuttig2, Anbarasu, Manivannan1,*

 

1 Indian Institute of Technolgy Indore, Madhya Pradesh, India

2RWTH Aachen University, Aachen, Germany

 


 

P2 - 11

 

Massive topological Dirac Semimetals from GeSbTe van-der-Waals Heterostructures

 

Peter C. Schmitz1, Wei Zhang2, Yuriy Mokrousov3 and Riccardo Mazzarello1

 

1RWTH Aachen, Germany

2Xian Jiaotong University, China

3Forschungszentrum Jülich, Germany

 

 

P2 - 12

 

Array Programming Scheme to enable Improved Transient based Non-linearity in Impact Ionization based Si-NIPIN selectors for Low Power

 

S. Shrivastava, U. Ganguly

 

Dept of Electrical Engineering, Indian Institute of Technology, Bombay, India 400076

 


 

P2 - 13

 

DOUBLE MgO/FeCoB INTERFACE FREE-LAYER FOR PERPENDICULAR MAGNETIC TUNNEL JUNCTIONS: EFFECT OF THICKNESS AND METALLIC SPACER

 

Bruno Teixeira1, Andrey Timopheev2,3,4, S. Auffret2,3,4,Ricardo C. Sousa2,3,4, Nikolai A. Sobolev1,5

 

1University of Aveiro, 3810-193 Aveiro, Portugal

2Univ. Grenoble Alpes, Grenoble, France

3 CEA, INAC-SPINTEC, Grenoble, France

4 CNRS, SPINTEC, Grenoble, France

5 National University of Science and Technology “MISiS”, Moscow, Russia

 

 

P2 - 14

 

Inherent Simple Cubic Lattice Being Responsible for the Ultrafast Solid Phase Change of Ge2Sb2Te5

 

Wen-Xiong Song1,2, Zhi-Pan Liu2, Li-Min Liu1

 

1 Beijing Computational Science Research Center, Beijing, China

2 Fudan University, Shanghai, China

 

 

P2 - 15

 

Kinetic Monte Carlo modeling of the charge transport in a HfO2-based ReRAM with a rough anode

 

Wilhelm Stehling1, Elhameh Abbaspour1, Stephan Menzel2, Christoph Jungemann1

 

1 RWTH Aachen University, Aachen, Germany

2 Forschungszentrum Jülich, Jülich, Germany

 

 

P2 - 16

 

High-speed voltage-control spintronics memory focused on reduction in write-current

 

H. Sugiyama, H. Yoda, K. Koi, S. Oikawa, B. Altansargai, T. Inokuchi, S. Shirotori, M. Shimizu, Y. Kato, Y. Ohsawa, M. Ishikawa, A. Tiwari, Y. Kamiguchi, N. Shimomura, Y. Saito, and A. Kurobe

 

Corporate R & D Center, Toshiba Corporation, Kawasaki, Japan

 

 

P2 - 17

 

Influence of structure and stoichiometry on oxygen diffusion and conductivity in gallium oxide thin films

 

Alexandra von der Heiden1, Manfred Martin1

 

1 RWTH Aachen University, Aachen, Germany

 

 

P2 - 18

 

Thermal effects on the I-V characteristics of filamentary VCM based ReRAM-cells using a nanometer-sized heater

 

Moritz von Witzleben1, Karsten Fleck1, Carsten Funck1, Thomas Breuer2, Erik Wichmann1, Rainer Waser1,2, Ulrich Böttger1 and Stephan Menzel2

 

1 RWTH Aachen University, Aachen, Germany

2 Forschungszentrum Jülich, Jülich, Germany

 


 

P2 - 19

 

Computational Study of Oxygen Diffusion along a[100] Dislocations
in the Perovskite
Oxide SrTiO3

 

Stephan P. Waldow, Roger A. De Souza

 

RWTH Aachen University,Aachen, Germany

 

 

P2 - 20

 

The Ovonic Cognitive Computer

 

Guy Wicker, Boil Pashmakov

 

Ovonic Cognitive Computer, Southfield, Michigan, USA

 

 

P2 - 21

 

Transition between two switching polarities in TiO2 based ReRAM cells

 

Hehe Zhang1, Sijung Yoo3, Cheol Seong Hwang3, Camilla La Torre2, Stephan Menzel1, Dirk Wouters2, and Susanne Hoffmann-Eifert1

 

1 Forschungszentrum Jülich, Jülich, Germany

2 RWTH Aachen University, Aachen, Germany

3 Seoul National University, Seoul, Korea

 

 

P2 - 22

 

Atom Probe Tomography of Phase Change Materials

 

Min Zhu1, Oana Cojocaru-Mirédin1, Antonio M. Mio1, Yuan Yu1, Ju-Young Cho1 and Matthias Wuttig1,2

 

1 RWTH Aachen University, Aachen, Germany

2JARA-FIT, Aachen, Germany

 

 

P2 - 23

 

Highly Thermally Stable Magnetoelectric Composite

 

Andrei V. Turutin1,2, João V. Vidal1, Ilya V. Kubasov2, Mikhail D. Malinkovich2, Svetlana P. Kobeleva2, Yurii N. Parkhomenko2, Tianyu Ma3, Xiaobing Ren4,5, Andrei L. Kholkin1, Nikolai A. Sobolev1,2

 

1 University of Aveiro, Portugal

2 National University of Science and Technology “MISIS”, Moscow, Russia

3 Zhejiang University, Hangzhou, China

4 National Institute for Materials Science, Tsukuba, Japan

5 Frontier Institute of Science and Technology, Xi’an Jiaotong University, China

 

Conference


30.08.2017 - 01.09.2017

I. Institute of Physics, RWTH Aachen, Germany

Image available on wikimedia commons. Author: Nima j72

Non-Volatile Memory Technology Symposium 2017

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