Technical Program
Here you find a list of all talks, invited to NVMTS 2017.
Session 1 – FLASH / RRAM
August 30 2017 Wednesday 9:30 – 11:25 AM
Keynote |
9:30 - 10:10 |
Phase-Change Memory Cell Architectures and Storage Class Memory Applications Fabio Pellizzer1 and Agostino Pirovano2 1 Micron Technology, Boise (Idaho), United States
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F - 01 |
10:10 - 10:35 |
3D Nand Flash Memories: Array Architectures and Scaling/Reliability Challenges Rino Micheloni Microsemi Corporation, Vimercate, Italy
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F - 02 |
10:35 - 11:00 |
RRAM device operation investigated using in-situ TEM Masashi Arita, Atsushi Tsurumaki-Fukuchi, Yasuo Takahashi Hokkaido University, Sapporo, Japan
|
F - 03 |
11:00 - 11:25 |
A Multiscale Modeling Approach for the Simulation of OxRRAM devices Andrea Padovani1,2, Luca Larcher3 1 MDLab s.r.l. Reggio Emilia, Italy 2MDLSoft Inc.,Santa Clara
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Session 2 – PCRAM I
August 30 2017 Wednesday 11:40 – 13:55 AM
PC - 01 |
11:40 - 12:05 |
Spatially Resolved Thermometry of PCM Devices Eilam Yalon, Sanchit Deshmukh, Miguel Muñoz Rojo, and Eric Pop Stanford University, USA
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PC - 02 |
11:05 - 12:30 |
A Unified Phase Change Memory Model Ali Gokirmak1, Zack Woods1, Jacob Scoggin1, Adam Cywar1, Nadim Ka’nan1, L’Hacene Adnane1, Sadid Muneer1, Gokhan Bakan1,2, Faruk Dirisaglik1,3, Nicholas Williams1, Azer Faraclas1, Mustafa Akbulut1, Zoila Jurado1, Lindsay Sullivan1, Kadir Cil1, Chung Lam4, Helena Silva1 1 University of Connecticut, Storrs, CT USA
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PC - 03 |
12:30 - 12:55 |
Switching Performance of the GeTe/Bi2Te3 Superlattice Based iPCM Kirill V. Mitrofanov1, Yuta Saito1,2, Noriyuki Miyata1, Paul Fons1, Alexander V. Kolobov1 and Junji Tominaga1 1 National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan
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Session 3 – CBRAM
August 30 2017 Wednesday 2:05 – 3:20 PM
CB - 01 |
1:05-2:30 |
Enhancement of CBRAM Performance by Controlled Formation of a Hourglass-Shaped Filament Attilio Belmonte1, Ludovic Goux1, Jiyong Woo1,2, Umberto Celano1, Augusto Redolfi1, Sergiu Clima1, Gouri Sankar Kar1 1 imec, Leuven, Belgium
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CB - 02 |
2:30-2:55 |
Tradeoff and perspectives for filamentary RRAM memories Etienne Nowak, Cécile Nail, Alessandro Grossi, Gabriel Molas, Carlo Cagli, Luca Perniola CEA, LETI, Grenoble, France
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CB - 03 |
2:55-3:20 |
Mapping the Metal-Insulator Transition in a NbO2 Selector with Scanning TEM Ebic
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Session 4 – MRAM / FERAM
August 31 2017 Thursday 8:30 – 10:25 AM
Keynote |
8:30-9:10 |
Embedded STT-MRAM Technology toward Mass Production G. H. Koh, Y. J. Song, S. O. Park, K. H. Hwang, G. Jeong, K. P. Lee, and H. K. Kang Samsung Electronics Co. Ltd, Hwasung, Korea
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MR - 01 |
9:10-9:35 |
Atom-thick tungsten engineered perpendicular magnetic tunnel junctions for large density STT-MRAM Wenlong Cai1, Mengxing Wang1, Kaihua Cao1, Jiaqi Zhou1, Shouzhong Peng1, Huaiwen Yang1, Anni Cao1, Jiaqi Wei1, Wang Kang1, Jerzy Wrona2, Berthold Ocker2, Juergen Langer2, Albert Fert1,3, Weisheng Zhao1, 1 Beihang University, Beijing, China.
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MR - 02 |
9:35-10:00 |
Ferroelectric Materials based on Hafnium Oxide for Non-Volatile Memories T. Mikolajick1,2, T. Schenk1, T. Mittmann1, M. Hoffmann1, B.Max2, C. Richter1, M. Pešić1, F. Fengler1, H. Mulaosmanovic1 , M.-H. Park1, S. Slesazeck1, U. Schroeder1, J. Müller3, P Polakowski3, S. Müller4, R.Materlik5, A. Kersch5 1 NaMLab gGmbH, Dresden, Germany.
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MR - 03 |
10:00-10:25 |
Universal pathway of ferroelectric phase evolution in doped HfO2 Akira Toriumi1, Lun Xu1, and Shinji Migita2 1 University of Tokyo, Japan
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Session 5 – PCRAM II
August 31 2017 Thursday 10:40 – 12:20 AM
PC - 04 |
10:40-11:05 |
Phase Change Materials by Design: The Mystery of Resonance Bonding M. Wuttig RWTH Aachen University of Technology, Germany
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PC - 05 |
11:05-11:30 |
Confined Phase Change Memory for M-type Storage Class Memory W. Kim1, M. BrightSky1, T. Masuda2, S. Kim1, R. Bruce1, F. Carta1, G. Fraczak1, A. Ray1, Y. Zhu1, K. Suu2 and C. Lam1 1IBM T. J. Watson Research Center, USA
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PC - 06 |
11:30-11:55 |
Ti-Sb-Te Phase Change Material and Memory Chip Zhitang, Song Chinese Academy of Sciences, Shanghai, China.
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PC - 07 |
11:55-12:20 |
Self-healing of a confined phase change memory device with a metallic surfactant layer Yujun, Xie1, Wanki, Kim2, Yerin Kim3 Matt, BrightSky2, Chung, Lam2, Yu Zhu2, Judy.J Cha1 1 Yale University, New Haven, United States
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Session 6 – RRAM I
August 31 2017 Thursday 1:30 – 2:45 PM
RR - 01 |
1:30-1:55 |
Uncovering switching and Failure Mechanisms in Memristive Devices by In-Operando Sprectromicroscopy Regina Dittmann, Christoph Bäumer Forschungszentrum Jülich GmbH, Germany
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RR - 02 |
1:55-2:20 |
Measuring and Analyzing Random Telegraph Noise in Nanoscale Devices: The Case of Resistive Random Access Memories Francesco Maria Puglisi Università di Modena e Reggio Emilia, Italy
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RR - 03 |
2:20-2:45 |
Optical Detection and Modulation with Atomic-Scale Conductive Bridging RAM (CBRAM) Cells Mathieu Luisier1, Alexandros Emboras1, Fabian Ducry1, Samuel Andermatt1, Bojun Cheng1, Ping Ma1, Yannick Salamin1, Thomas Schimmel3, and Jürg Leuthold1 1 ETH Zurich, Switzerland
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Session 7 – Neuromorphic
September 01 2017 Friday 8:30 – 10:25 AM
Keynote |
8:30-9:10 |
Applications of phase-change memory in brain-inspired computing Abu Sebastian IBM Research, Zurich, Switzerland
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N - 01 |
9:10-9:35 |
HfO2 RRAM as Electronic Synapses for Neuromorphic Computing S. Spiga1, S. Brivio1, E. Covi1, J, Frascaroli1, D. Conti2,3, R. George,2 M.V. Nair2, C. Ricciardi,3 G. Indiveri2 1 CNR - IMM, Agrate Brianza, Italy
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N - 02 |
9:35-10:00 |
A Large-scale Neuromorphic Chip with Distributed PCRAM Jing Pei1, Zhenzhi Wu1, Wei He1, Zhitang Song2, Luping Shi1 1 Tsinghua University, Beijing, 100084, P. R. China
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N - 03 |
10:00-10:25 |
Controlling Ionic Transport in RRAM for Neuromorphic Computing Applications Jihang Lee, Yeonjoo Jeong, Wei D. Lu University of Michigan, USA
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Session 8 – RRAM II
September 01 2017 Friday 10:40 – 12:20 AM
RR - 04 |
10:40-11:05 |
Memory Advanced Demonstrator (MAD) for BEOL NVM benchmark and assessment Jean Coignus, Carlo Cagli, Gilles Reimbold, Etienne Nowak and Luca Perniola CEA, LETI, Grenoble, France
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RR - 05 |
11:05-11:30 |
Reduction of Cycle-to-Cycle Variability in ReRAM by Artificially-Induced Filamentary Refresh K. Ohmori1, A. Shinoda1, K. Kawai2, Z. Wei2, T. Mikawa2, and R. Hasunuma3 1 Device Lab Inc., Ibaraki, Japan
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RR - 06 |
11:30-11:55 |
Role of Electron and Hole Injection in Electroforming of SiO2 and HfO2 RRAM Cells Alexander Shluger1,2, David Z. Gao1, Jack Strand1, Moloud Kaviani2, Adnan Mehonic1, and Anthony Kenyon1 1 University College London, UK
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RR - 07 |
11:55-12:20 |
Modelling of Resistive Switching Devices based on the Valence Change Mechanism S. Menzel1, C. Funck2, C. La Torre2, A. Marchewka2, K. Fleck2, C. Bäumer1, V. Rana1, S. Hoffmann-Eifert1, R. Dittmann1, R. Waser1,2 1 Forschungszentrum Jülich, Germany
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Session 9 – New Applications
September 01 2017 Friday 1:30 – 2:45 PM
NA - 01 |
1:30-1:55 |
16Mb Resistive Random Access Memory Chip Implementation and its Applications Huaqiang Wu, Dong Wu, Bin Gao, Yachuan Pang, Ning Deng and He Qian Tsinghua University, Beijing, China
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NA - 02 |
1:55-2:20 |
Threshold Switching and Electro-Formation in TaOx-Based RRAM Marek Skowronski1, Dasheng Li1, Yuanzhi Ma1, Jonathan Goodwill1, James A. Bain1 and A. A. Herzing2 1 Carnegie Mellon university, Pittsburgh, USA
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NA - 03 |
2:20-2:45 |
Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM Milan Pešić1, Michael Hoffmann1, Claudia Richter1, Stefan Slesazeck1, Thomas Mikolajick1,2, Uwe Schroeder1 1 NaMLab gGmbH, Dresden, Germany
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Conference
30.08.2017 - 01.09.2017
I. Institute of Physics, RWTH Aachen, Germany
The conference will be held on the top floor of the SuperC building of the RWTH Aachen University.
Templergraben 57
52062 Aachen
Germany
The European Phase Change and Ovonics Symposium (E\PCOS) 2017 was also be held in Aachen.
Non-Volatile Memory Technology Symposium 2017
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- Last update: January 11, 2018, 13:30