P1 - 01

High Speed and High-Area Efficiency Non-Volatile Look-Up Table Design

Rana Alhalabi¹, Gregory Di Pendina², Etienne Nowak¹, Ioan-lucian Prejbeanu², Luca Perniola¹

¹CEA LETI, Grenoble, France

²Univ. Grenoble Alpes, France

P1 - 02

Controlling growth of Materials and structure for resistive memory using combinatorial synthesis and high-throughput screening methodologies

Mabkhoot, Alsaiari¹, Brian, Hayden²

¹ Najran University, Sharurah, KSA

² Southampton University, Southampton, UK

P1 - 03

Cross Effects of Endurance and Retention Time in STT-RAM based Last Level Cache

Fatemeh Arezoomand¹, Mahdi Fazeli¹, Mahmood Fathy¹, Mohammad Taher Hallaj Shoushtari ²

¹ Iran University of Science & Technology, Tehran, Iran

² Science and Research branch of Islamic Azad University, Tehran, Iran

P1 - 04

A Multi-Memristive Synaptic Architecture and Experimental Demonstrations

I. Boybat^{1, 2}, M. Le Gallo^{1, 3}, S. R. Nandakumar^{1, 4}, T. Moraitis¹, T. Tuma¹, Y. Leblebici², A. Sebastian¹ and E. Eleftheriou¹

¹ IBM – Research Zurich, Rüschlikon, Switzerland    ² EPFL, Lausanne, Switzerland

³ ETH Zurich, Zurich, Switzerland    ⁴ NJIT, Newark, NJ, USA

P1 - 05

EXPLOITING THE POTENTIAL OF ADVANCED PHASE CHANGE MATERIAL EPITAXIAL STRUCTURES

Raffaella Calarco, Stefano Cecchi, Jos E. Boschker, Eugenio Zallo

Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany

P1 - 06

Improvement of Electrical Characteristics of SiO2/ZrO2 Hybrid tunnel Oxide for Charge Trap Flash Memory

Jaeho Choi^1,2, Ilsub Jung¹

¹ Colleague of Information and Communication Engineering, Sungkyunkwan University, Suwon, Korea

² Department of Process Development 2 Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi, Korea

P1 - 07

Nanosized conducting filaments formed by atomic-scale defects in Fe-doped SrTiO3 thin-film resistive switching memories

Hongchu Du^1,2, Chun-Lin Jia^1,3,4, Annemarie Koehl³, Juri Barthel^1,2, Regina Dittmann³, Rainer Waser^3,5,6, and Joachim Mayer^1,2,6

¹ Forschungszentrum Jülich GmbH, Juelich, Germany

²RWTH Aachen University, Aachen, Germany

³Peter Grünberg Institute, Jülich, Germany

⁴Xi’an Jiaotong University, Xi'an, China

⁵RWTH Aachen University, Aachen, Germany

⁶Jülich-Aachen Research Alliance, (JARA-FIT), Jülich-Aachen , Germany

P1 - 08

Endurance Prediction and Error Reduction in NAND Flash Using Machine Learning

Barry Fitzgerald¹, Damien Hogan², Jeannie Fitzgerald², Joe Sullivan¹, Conor Ryan³

¹ Limerick Institute of Technology, Limerick, Ireland

² NVMdurance Ltd, Limerick, Ireland

³ University of Limerick, Limerick, Ireland

P1 - 09

Field-enhanced Ion Transport Revisited

Annalena R. Genreith-Schriever, Roger A. De Souza

RWTH Aachen University, Aachen, Germany

P1 - 10

Investigation of oxygen vacancy formation and migration in HfO2 from density functional theory

Marta Gibertini, Daniel Wortmann, Gustav Bihlmayer, Shigeru Tsukamoto,

 Stefan Blügel

Forschungszentrum Jülich and JARA, Jülich, Germany

P1 - 11

Stoichiometry-dependence of resistive switching in amorphous gallium oxide

Philipp Hein, Manfred Martin

RWTH Aachen University, Institute of Physical Chemistry, Aachen, Germany

P1 - 12

Switching behaviour of ZrOx-based bi-layer and tri-layer resistive memory

Ruomeng Huang¹, Xingzhao Yan¹, Reza Kashitiban², Richard Beanland², Katrina A Morgan¹, Martin D B Charlton¹ , C H (Kees) de Groot¹

¹ University of Southampton, Southampton, UK  ² University of Warwick, Coventry, UK

P1 - 13

SCANNING TEM EBIC OF SWITCHING IN Ti/HfO2/Pt VALENCE CHANGE MEMORY

William A. Hubbard, Jared Lodico, B.C. Regan

¹Department of Physics & Astronomy and California NanoSystems Institute, University of California, Los Angeles, CA, USA

P1 - 14

Highly reliable controllability of quadruple-level-cell operation in HfO2 based resistive switching device

Gun Hwan Kim, Ji Woon Choi, Bo Keun Park, Jeong Hwan Han, Taek-Mo Chung, and Young Kuk Lee

Center for Thin-Film Materials, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-Ro, Yuseong-Gu, Daejeon 34114, Republic of Korea

P1 - 15

INNOVATIVE GeS2/Sb2Te3 BASED PHASE-CHANGE MEMORY FOR LOW POWER APPLICATIONS

Julia Kluge^{1, 2, 3}, Anthonin Verdy², Gabriele Navarro², Serge Blonkowski¹,

Véronique Sousa², Philippe Kowalczyk², Mathieu Bernard², Nicolas Bernier², Guillaume Bourgeois², Niccolò Castellani², Pierre Noé² and Luca Perniola²

¹   STMicroelectronics, Crolles, France.

²   CEA, LETI, Grenoble, France. ³ IMEP-LAHC, Minatec/INPG, 3Grenoble, France

P1 - 16

Theoretical Analysis of Methyl-Ammine Lead-Tin Iodide based Resistive Memory

Yongwoo Kwon¹, Hayoun Shim¹, Kyoung-Hwan Min¹, Nayoung Park², Pil-Ryung Cha²

¹ Hongik University, Seoul, Korea

² Kookmin University, Seoul, Korea

P1 - 17

Charge Transition of Oxygen Vacancy during Resistive Switching in Oxide-RRAM

Jihang Lee,^1,2 William Schell,¹ Xiaojian Zhu,¹Emmanouil Kioupakis,² Wei D. Lu¹

¹ Department of Electrical Engineering and Computer Science, University of Michigan,

² Department of Materials Science and Engineering, University of Michigan,

Ann Arbor, 48109, United States

P1 - 18

Infrared Near-field Spectroscopy of Free Charge Carriers at Grain Boundaries in Sr1-xLaxTiO3 Ceramics on the nm-Scale

Martin Lewin^1,2, Fabian Gaussmann², Jochen Wüppen², Sebastian Nyga², Bernd Jungbluth², Alexander Schwedt^4,5, Rainer Waser³, Joachim Mayer^4,5
and Thomas Taubner^1,2

¹RWTH Aachen University, Aachen, Germany

²Fraunhofer Institute for Laser Technology (ILT), Aachen, Germany

³RWTH Aachen University, Juelich Aachen Research Alliance, Aachen, Germany

⁴RWTH Aachen University, Aachen, Germany

⁵Ernst Ruska-Centre and JARA, Forschungszentrum Jülich GmbH, Jülich, Germany

P1 - 19

3D-Xpoint block device deployed in hyperscale infrastructure

Ping Zhou, Shu Li

Alibaba Infrastructure Service，Alibaba Group

P1 - 20

Forming-free TaOx-based ReRAM Stack Prepared by Magnetron Sputtering Method

Yusuke Miyaguchi, Shun Manita, Hyung-Woo Ahn, Kazushi Fuse, Shunpei Ota and Takehito Jimbo

ULVAC, Inc. Susono, Shizuoka, Japan

P1 - 21

Investigation of behaviour of cubic to hexagonal phase transition in Ge-Sb-Te based chalcogenide on silicon nitride passivation

Jinsu, Oh, Byeong-Seon, An, and Cheol-Woong, Yang

Sungkyunkwan University, Suwon, Korea

P2 - 01

Study on Insulator - metal transition characteristics of NbO2 for selector device

Jaehyuk Park, Euijun Cha and Hyunsang Hwang^*

Pohang University of Science and Technology, Pohang, Korea

P2 - 02

MOTARO - a Fault-Tolerant NOR Flash Memory Controller for Embedded Systems

Patryk Skoncej, Oliver Schrape

IHP, Frankfurt (Oder), Germany

P2 - 03

FORMING-FREE, BIPOLAR RESISTIVE SWITCHING IN ZINC FERRITE THIN FILMS

Senthilkumar Rajarathinam¹, Neeraj Panwar², Pankaj Kumbhare², Udayan Ganguly² and N. Venkataramani¹

¹ Department of Metallurgical Engineering and Materials Science,

² Indian Institute of Technology Bombay, Mumbai, India

P2 - 04

High Temperature Retention Characteristics of TaOx ReRAM

Archana Dangwal^{1, 3}, Wonjoo Kim¹, Dirk J. Wouters², Thomas Mikolajick³, Rainer Waser^{1, 2}, Vikas Rana¹

¹ Forschungszentrum Jülich GmbH, Jülich, Germany

²IWE 2, RWTH Aachen University, Aachen, German

³Faculty of Electrical and Computer Engineering, TU Dresden Corresponding

P2 - 05

Tuning the local conductivity of ALD-grown TiO₂ ReRAM cells by Au nanoparticles

Christian Rodenbücher¹, Nabeel Aslam¹, Hehe Zhang¹,

Hongchu Du², Dirk Mayer¹, Susanne Hoffmann-Eifert¹

¹ Peter Grünberg Institute and JARA-FIT, Forschungszentrum Jülich, Germany

² Ernst Ruska-Centre, Forschungszentrum Jülich, Germany

P2 - 06

Crystallization of Phase-Change Materials from Molecular Dynamics Simulations

Ider Ronneberger1, Wei Zhang⁴, Martin Salinga^1,3, Abu Sebastian³, Matthias Wuttig¹ and Riccardo Mazzarello¹

¹ RWTH Aachen University, Aachen, Germany

³ IBM Research-Zurich, Rüschlikon, Switzerland  

⁴ Xi'an Jiaotong University, Shaanxi, China

P2 - 07

DIFFERENT TRANSPORT PROPERTIES AT VERY LOW TEMPERATURES BETWEEN SUBSTOICHIOMETRIC TaOx IN ReRAM CONDUCTIVE FILAMENTS AND IN THIN FILMS

Carlos M. M. Rosário^1,2, Bo Thöner², Alexander Schönhals², Stephan Menzel³, Matthias Wuttig², Rainer Waser^2,3, Nikolai A. Sobolev^1,4, Dirk J. Wouters²

1 University of Aveiro, Aveiro, Portugal

2 RWTH Aachen University, Aachen, Germany

3 Peter Grünberg Institute and JARA-FIT, Forschungszentrum Jülich, Germany

4 National University of Science and Technology “MISiS”, Moscow, Russia

P2 - 08

Boundary formation in SrTiO3-TiO2 solid solutions

Konstantin Rushchanskii, Stefan Blügel, Marjana Ležaić

Forschungszentrum Jülich and JARA, Jülich, Germany

P2 - 09

ELECTRICAL CONDUCTION IN AMORPHOUS PHASE CHANGE MATERIALS

Martin Salinga 1,2

1 IBM Research - Zurich, Rüschlikon, Switzerland

2 RWTH Aachen University, Aachen, Germany

P2 - 10

Ultrafast threshold-switching dynamics in Ge2Sb2Te5 phase change memory device

Nishant, Saxena¹, Chao, Chen², Matthias, Wuttig², Anbarasu, Manivannan^1,*

¹ Indian Institute of Technolgy Indore, Madhya Pradesh, India

²RWTH Aachen University, Aachen, Germany

P2 - 11

Massive topological Dirac Semimetals from GeSbTe van-der-Waals Heterostructures

Peter C. Schmitz¹, Wei Zhang², Yuriy Mokrousov³ and Riccardo Mazzarello¹

¹RWTH Aachen, Germany

²Xian Jiaotong University, China

³Forschungszentrum Jülich, Germany

P2 - 12

Array Programming Scheme to enable Improved Transient based Non-linearity in Impact Ionization based Si-NIPIN selectors for Low Power

S. Shrivastava, U. Ganguly

Dept of Electrical Engineering, Indian Institute of Technology, Bombay, India 400076

P2 - 13

DOUBLE MgO/FeCoB INTERFACE FREE-LAYER FOR PERPENDICULAR MAGNETIC TUNNEL JUNCTIONS: EFFECT OF THICKNESS AND METALLIC SPACER

Bruno Teixeira¹, Andrey Timopheev^2,3,4, S. Auffret^2,3,4,Ricardo C. Sousa^2,3,4, Nikolai A. Sobolev^1,5

¹University of Aveiro, 3810-193 Aveiro, Portugal

²Univ. Grenoble Alpes, Grenoble, France

³ CEA, INAC-SPINTEC, Grenoble, France

⁴ CNRS, SPINTEC, Grenoble, France

⁵ National University of Science and Technology “MISiS”, Moscow, Russia

P2 - 14

Inherent Simple Cubic Lattice Being Responsible for the Ultrafast Solid Phase Change of Ge2Sb2Te5

Wen-Xiong Song^1,2, Zhi-Pan Liu², Li-Min Liu¹

¹ Beijing Computational Science Research Center, Beijing, China

² Fudan University, Shanghai, China

P2 - 15

Kinetic Monte Carlo modeling of the charge transport in a HfO2-based ReRAM with a rough anode

Wilhelm Stehling¹, Elhameh Abbaspour¹, Stephan Menzel², Christoph Jungemann¹

¹ RWTH Aachen University, Aachen, Germany

² Forschungszentrum Jülich, Jülich, Germany

P2 - 16

High-speed voltage-control spintronics memory focused on reduction in write-current

H. Sugiyama, H. Yoda, K. Koi, S. Oikawa, B. Altansargai, T. Inokuchi, S. Shirotori, M. Shimizu, Y. Kato, Y. Ohsawa, M. Ishikawa, A. Tiwari, Y. Kamiguchi, N. Shimomura, Y. Saito, and A. Kurobe

Corporate R & D Center, Toshiba Corporation, Kawasaki, Japan

P2 - 17

Influence of structure and stoichiometry on oxygen diffusion and conductivity in gallium oxide thin films

Alexandra von der Heiden¹, Manfred Martin¹

¹ RWTH Aachen University, Aachen, Germany

P2 - 18

Thermal effects on the I-V characteristics of filamentary VCM based ReRAM-cells using a nanometer-sized heater

Moritz von Witzleben¹, Karsten Fleck¹, Carsten Funck¹, Thomas Breuer², Erik Wichmann¹, Rainer Waser^1,2, Ulrich Böttger¹ and Stephan Menzel²

¹ RWTH Aachen University, Aachen, Germany

² Forschungszentrum Jülich, Jülich, Germany

P2 - 19

Computational Study of Oxygen Diffusion along a[100] Dislocations
in the Perovskite Oxide SrTiO₃

Stephan P. Waldow, Roger A. De Souza

RWTH Aachen University,Aachen, Germany

P2 - 20

The Ovonic Cognitive Computer

Guy Wicker, Boil Pashmakov

Ovonic Cognitive Computer, Southfield, Michigan, USA

P2 - 21

Transition between two switching polarities in TiO₂ based ReRAM cells

Hehe Zhang¹, Sijung Yoo³, Cheol Seong Hwang³, Camilla La Torre², Stephan Menzel¹, Dirk Wouters², and Susanne Hoffmann-Eifert¹

¹ Forschungszentrum Jülich, Jülich, Germany

² RWTH Aachen University, Aachen, Germany

³ Seoul National University, Seoul, Korea

P2 - 22

Atom Probe Tomography of Phase Change Materials

Min Zhu¹, Oana Cojocaru-Mirédin¹, Antonio M. Mio¹, Yuan Yu¹, Ju-Young Cho¹ and Matthias Wuttig^1,2

¹ RWTH Aachen University, Aachen, Germany

²JARA-FIT, Aachen, Germany

P2 - 23

Highly Thermally Stable Magnetoelectric Composite

Andrei V. Turutin^1,2, João V. Vidal¹, Ilya V. Kubasov², Mikhail D. Malinkovich², Svetlana P. Kobeleva², Yurii N. Parkhomenko², Tianyu Ma³, Xiaobing Ren^4,5, Andrei L. Kholkin¹, Nikolai A. Sobolev^1,2

¹ University of Aveiro, Portugal

² National University of Science and Technology “MISIS”, Moscow, Russia

³ Zhejiang University, Hangzhou, China

⁴ National Institute for Materials Science, Tsukuba, Japan

⁵ Frontier Institute of Science and Technology, Xi’an Jiaotong University, China