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Poster Sessions


The poster contributions are divided in two poster sessions. The splitting is done by last
names in alphabetical order. Please put up your poster on the date of the session between
9:00 AM and 2:30 PM and take it down until 6 PM, right after the session.

1. Poster Session (contributions with presenter-last names beginning with A-O)
Wednesday August 30, 3:30 – 5:00 PM

2. Poster Session (contributions with presenter-last names beginning with P-Z)
Thursday August 31, 3:00 – 5:00 PM

Awards will be given for the top three posters regarding presentation, technical quality and impact. Members of the conference committee will judge the posters during the session.

Posters should be of DIN-A0 size in portrait orientation.


Poster Session – 1

August 30       2017      Wednesday                 3:00 – 5:00 PM


P1 - 01


High Speed and High-Area Efficiency Non-Volatile Look-Up Table Design


Rana Alhalabi1, Gregory Di Pendina2, Etienne Nowak1, Ioan-lucian Prejbeanu2, Luca Perniola1


1CEA LETI, Grenoble, France

2Univ. Grenoble Alpes, France



P1 - 02


Controlling growth of Materials and structure for resistive memory using combinatorial synthesis and high-throughput screening methodologies


Mabkhoot, Alsaiari1, Brian, Hayden2


1 Najran University, Sharurah, KSA

2 Southampton University, Southampton, UK



P1 - 03


Cross Effects of Endurance and Retention Time in STT-RAM based Last Level Cache


Fatemeh Arezoomand1, Mahdi Fazeli1, Mahmood Fathy1, Mohammad Taher Hallaj Shoushtari 2


1 Iran University of Science & Technology, Tehran, Iran

2 Science and Research branch of Islamic Azad University, Tehran, Iran



P1 - 04


A Multi-Memristive Synaptic Architecture and Experimental Demonstrations


I. Boybat1, 2, M. Le Gallo1, 3, S. R. Nandakumar1, 4, T. Moraitis1, T. Tuma1, Y. Leblebici2, A. Sebastian1 and E. Eleftheriou1


1 IBM – Research Zurich, Rüschlikon, Switzerland    2 EPFL, Lausanne, Switzerland

3 ETH Zurich, Zurich, Switzerland    4 NJIT, Newark, NJ, USA



P1 - 05




Raffaella Calarco, Stefano Cecchi, Jos E. Boschker, Eugenio Zallo


Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany



P1 - 06


Improvement of Electrical Characteristics of SiO2/ZrO2 Hybrid tunnel Oxide for Charge Trap Flash Memory


Jaeho Choi1,2, Ilsub Jung1


1 Colleague of Information and Communication Engineering, Sungkyunkwan University, Suwon, Korea

2 Department of Process Development 2 Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi, Korea



P1 - 07


Nanosized conducting filaments formed by atomic-scale defects in Fe-doped SrTiO3 thin-film resistive switching memories


Hongchu Du1,2, Chun-Lin Jia1,3,4, Annemarie Koehl3, Juri Barthel1,2, Regina Dittmann3, Rainer Waser3,5,6, and Joachim Mayer1,2,6


1 Forschungszentrum Jülich GmbH, Juelich, Germany

2RWTH Aachen University, Aachen, Germany

3Peter Grünberg Institute, Jülich, Germany

4Xi’an Jiaotong University, Xi'an, China

5RWTH Aachen University, Aachen, Germany

6Jülich-Aachen Research Alliance, (JARA-FIT), Jülich-Aachen , Germany



P1 - 08


Endurance Prediction and Error Reduction in NAND Flash Using Machine Learning


Barry Fitzgerald1, Damien Hogan2, Jeannie Fitzgerald2, Joe Sullivan1, Conor Ryan3


1 Limerick Institute of Technology, Limerick, Ireland

2 NVMdurance Ltd, Limerick, Ireland

3 University of Limerick, Limerick, Ireland



P1 - 09


Field-enhanced Ion Transport Revisited


Annalena R. Genreith-Schriever, Roger A. De Souza


RWTH Aachen University, Aachen, Germany



P1 - 10


Investigation of oxygen vacancy formation and migration in HfO2 from density functional theory


Marta Gibertini, Daniel Wortmann, Gustav Bihlmayer, Shigeru Tsukamoto,

 Stefan Blügel


Forschungszentrum Jülich and JARA, Jülich, Germany



P1 - 11


Stoichiometry-dependence of resistive switching in amorphous gallium oxide


Philipp Hein, Manfred Martin


RWTH Aachen University, Institute of Physical Chemistry, Aachen, Germany



P1 - 12


Switching behaviour of ZrOx-based bi-layer and tri-layer resistive memory


Ruomeng Huang1, Xingzhao Yan1, Reza Kashitiban2, Richard Beanland2, Katrina A Morgan1, Martin D B Charlton1 , C H (Kees) de Groot1


1 University of Southampton, Southampton, UK  2 University of Warwick, Coventry, UK



P1 - 13




William A. Hubbard, Jared Lodico, B.C. Regan


1Department of Physics & Astronomy and California NanoSystems Institute, University of California, Los Angeles, CA, USA



P1 - 14


Highly reliable controllability of quadruple-level-cell operation in HfO2 based resistive switching device


Gun Hwan Kim, Ji Woon Choi, Bo Keun Park, Jeong Hwan Han, Taek-Mo Chung, and Young Kuk Lee


Center for Thin-Film Materials, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-Ro, Yuseong-Gu, Daejeon 34114, Republic of Korea



P1 - 15




Julia Kluge1, 2, 3, Anthonin Verdy2, Gabriele Navarro2, Serge Blonkowski1,

Véronique Sousa2, Philippe Kowalczyk2, Mathieu Bernard2, Nicolas Bernier2, Guillaume Bourgeois2, Niccolò Castellani2, Pierre Noé2 and Luca Perniola2


1   STMicroelectronics, Crolles, France.

2   CEA, LETI, Grenoble, France. 3 IMEP-LAHC, Minatec/INPG, 3Grenoble, France



P1 - 16


Theoretical Analysis of Methyl-Ammine Lead-Tin Iodide based Resistive Memory


Yongwoo Kwon1, Hayoun Shim1, Kyoung-Hwan Min1, Nayoung Park2, Pil-Ryung Cha2


1 Hongik University, Seoul, Korea

2 Kookmin University, Seoul, Korea



P1 - 17


Charge Transition of Oxygen Vacancy during Resistive Switching in Oxide-RRAM


Jihang Lee,1,2 William Schell,1 Xiaojian Zhu,1Emmanouil Kioupakis,2 Wei D. Lu1


1 Department of Electrical Engineering and Computer Science, University of Michigan,

2 Department of Materials Science and Engineering, University of Michigan,

Ann Arbor, 48109, United States



P1 - 18


Infrared Near-field Spectroscopy of Free Charge Carriers at Grain Boundaries in Sr1-xLaxTiO3 Ceramics on the nm-Scale


Martin Lewin1,2, Fabian Gaussmann2, Jochen Wüppen2, Sebastian Nyga2, Bernd Jungbluth2, Alexander Schwedt4,5, Rainer Waser3, Joachim Mayer4,5
and Thomas Taubner1,2


1RWTH Aachen University, Aachen, Germany

2Fraunhofer Institute for Laser Technology (ILT), Aachen, Germany

3RWTH Aachen University, Juelich Aachen Research Alliance, Aachen, Germany

4RWTH Aachen University, Aachen, Germany

5Ernst Ruska-Centre and JARA, Forschungszentrum Jülich GmbH, Jülich, Germany



P1 - 19


3D-Xpoint block device deployed in hyperscale infrastructure


Ping Zhou, Shu Li


Alibaba Infrastructure ServiceAlibaba Group



P1 - 20


Forming-free TaOx-based ReRAM Stack Prepared by Magnetron Sputtering Method


Yusuke Miyaguchi, Shun Manita, Hyung-Woo Ahn, Kazushi Fuse, Shunpei Ota and Takehito Jimbo


ULVAC, Inc. Susono, Shizuoka, Japan


P1 - 21

Investigation of behaviour of cubic to hexagonal phase transition in Ge-Sb-Te based chalcogenide on silicon nitride passivation


Jinsu, Oh, Byeong-Seon, An, and Cheol-Woong, Yang


Sungkyunkwan University, Suwon, Korea



Poster Session – 2

August 31       2017      Thursday     3:00 – 5:00 PM


P2 - 01


Study on Insulator - metal transition characteristics of NbO2 for selector device


Jaehyuk Park, Euijun Cha and Hyunsang Hwang*


Pohang University of Science and Technology, Pohang, Korea



P2 - 02


MOTARO - a Fault-Tolerant NOR Flash Memory Controller for Embedded Systems


Patryk Skoncej, Oliver Schrape


IHP, Frankfurt (Oder), Germany



P2 - 03




Senthilkumar Rajarathinam1, Neeraj Panwar2, Pankaj Kumbhare2, Udayan Ganguly2 and N. Venkataramani1


1 Department of Metallurgical Engineering and Materials Science,

2 Indian Institute of Technology Bombay, Mumbai, India



P2 - 04


High Temperature Retention Characteristics of TaOx ReRAM


Archana Dangwal1, 3, Wonjoo Kim1, Dirk J. Wouters2, Thomas Mikolajick3, Rainer Waser1, 2, Vikas Rana1


1 Forschungszentrum Jülich GmbH, Jülich, Germany

2IWE 2, RWTH Aachen University, Aachen, German

3Faculty of Electrical and Computer Engineering, TU Dresden Corresponding




P2 - 05


Tuning the local conductivity of ALD-grown TiO2 ReRAM cells by Au nanoparticles


Christian Rodenbücher1, Nabeel Aslam1, Hehe Zhang1,

Hongchu Du2, Dirk Mayer1, Susanne Hoffmann-Eifert1


1 Peter Grünberg Institute and JARA-FIT, Forschungszentrum Jülich, Germany

2 Ernst Ruska-Centre, Forschungszentrum Jülich, Germany



P2 - 06


Crystallization of Phase-Change Materials from Molecular Dynamics Simulations


Ider Ronneberger1, Wei Zhang4, Martin Salinga1,3, Abu Sebastian3, Matthias Wuttig1 and Riccardo Mazzarello1


1 RWTH Aachen University, Aachen, Germany

3 IBM Research-Zurich, Rüschlikon, Switzerland  

4 Xi'an Jiaotong University, Shaanxi, China


P2 - 07




Carlos M. M. Rosário1,2, Bo Thöner2, Alexander Schönhals2, Stephan Menzel3, Matthias Wuttig2, Rainer Waser2,3, Nikolai A. Sobolev1,4, Dirk J. Wouters2


1 University of Aveiro, Aveiro, Portugal

2 RWTH Aachen University, Aachen, Germany

3 Peter Grünberg Institute and JARA-FIT, Forschungszentrum Jülich, Germany

4 National University of Science and Technology “MISiS”, Moscow, Russia



P2 - 08


Boundary formation in SrTiO3-TiO2 solid solutions


Konstantin Rushchanskii, Stefan Blügel, Marjana Ležaić


Forschungszentrum Jülich and JARA, Jülich, Germany



P2 - 09




Martin Salinga 1,2


1 IBM Research - Zurich, Rüschlikon, Switzerland

2 RWTH Aachen University, Aachen, Germany


P2 - 10


Ultrafast threshold-switching dynamics in Ge2Sb2Te5 phase change memory device


Nishant, Saxena1, Chao, Chen2, Matthias, Wuttig2, Anbarasu, Manivannan1,*


1 Indian Institute of Technolgy Indore, Madhya Pradesh, India

2RWTH Aachen University, Aachen, Germany



P2 - 11


Massive topological Dirac Semimetals from GeSbTe van-der-Waals Heterostructures


Peter C. Schmitz1, Wei Zhang2, Yuriy Mokrousov3 and Riccardo Mazzarello1


1RWTH Aachen, Germany

2Xian Jiaotong University, China

3Forschungszentrum Jülich, Germany



P2 - 12


Array Programming Scheme to enable Improved Transient based Non-linearity in Impact Ionization based Si-NIPIN selectors for Low Power


S. Shrivastava, U. Ganguly


Dept of Electrical Engineering, Indian Institute of Technology, Bombay, India 400076



P2 - 13




Bruno Teixeira1, Andrey Timopheev2,3,4, S. Auffret2,3,4,Ricardo C. Sousa2,3,4, Nikolai A. Sobolev1,5


1University of Aveiro, 3810-193 Aveiro, Portugal

2Univ. Grenoble Alpes, Grenoble, France

3 CEA, INAC-SPINTEC, Grenoble, France

4 CNRS, SPINTEC, Grenoble, France

5 National University of Science and Technology “MISiS”, Moscow, Russia



P2 - 14


Inherent Simple Cubic Lattice Being Responsible for the Ultrafast Solid Phase Change of Ge2Sb2Te5


Wen-Xiong Song1,2, Zhi-Pan Liu2, Li-Min Liu1


1 Beijing Computational Science Research Center, Beijing, China

2 Fudan University, Shanghai, China



P2 - 15


Kinetic Monte Carlo modeling of the charge transport in a HfO2-based ReRAM with a rough anode


Wilhelm Stehling1, Elhameh Abbaspour1, Stephan Menzel2, Christoph Jungemann1


1 RWTH Aachen University, Aachen, Germany

2 Forschungszentrum Jülich, Jülich, Germany



P2 - 16


High-speed voltage-control spintronics memory focused on reduction in write-current


H. Sugiyama, H. Yoda, K. Koi, S. Oikawa, B. Altansargai, T. Inokuchi, S. Shirotori, M. Shimizu, Y. Kato, Y. Ohsawa, M. Ishikawa, A. Tiwari, Y. Kamiguchi, N. Shimomura, Y. Saito, and A. Kurobe


Corporate R & D Center, Toshiba Corporation, Kawasaki, Japan



P2 - 17


Influence of structure and stoichiometry on oxygen diffusion and conductivity in gallium oxide thin films


Alexandra von der Heiden1, Manfred Martin1


1 RWTH Aachen University, Aachen, Germany



P2 - 18


Thermal effects on the I-V characteristics of filamentary VCM based ReRAM-cells using a nanometer-sized heater


Moritz von Witzleben1, Karsten Fleck1, Carsten Funck1, Thomas Breuer2, Erik Wichmann1, Rainer Waser1,2, Ulrich Böttger1 and Stephan Menzel2


1 RWTH Aachen University, Aachen, Germany

2 Forschungszentrum Jülich, Jülich, Germany



P2 - 19


Computational Study of Oxygen Diffusion along a[100] Dislocations
in the Perovskite
Oxide SrTiO3


Stephan P. Waldow, Roger A. De Souza


RWTH Aachen University,Aachen, Germany



P2 - 20


The Ovonic Cognitive Computer


Guy Wicker, Boil Pashmakov


Ovonic Cognitive Computer, Southfield, Michigan, USA



P2 - 21


Transition between two switching polarities in TiO2 based ReRAM cells


Hehe Zhang1, Sijung Yoo3, Cheol Seong Hwang3, Camilla La Torre2, Stephan Menzel1, Dirk Wouters2, and Susanne Hoffmann-Eifert1


1 Forschungszentrum Jülich, Jülich, Germany

2 RWTH Aachen University, Aachen, Germany

3 Seoul National University, Seoul, Korea



P2 - 22


Atom Probe Tomography of Phase Change Materials


Min Zhu1, Oana Cojocaru-Mirédin1, Antonio M. Mio1, Yuan Yu1, Ju-Young Cho1 and Matthias Wuttig1,2


1 RWTH Aachen University, Aachen, Germany

2JARA-FIT, Aachen, Germany



P2 - 23


Highly Thermally Stable Magnetoelectric Composite


Andrei V. Turutin1,2, João V. Vidal1, Ilya V. Kubasov2, Mikhail D. Malinkovich2, Svetlana P. Kobeleva2, Yurii N. Parkhomenko2, Tianyu Ma3, Xiaobing Ren4,5, Andrei L. Kholkin1, Nikolai A. Sobolev1,2


1 University of Aveiro, Portugal

2 National University of Science and Technology “MISIS”, Moscow, Russia

3 Zhejiang University, Hangzhou, China

4 National Institute for Materials Science, Tsukuba, Japan

5 Frontier Institute of Science and Technology, Xi’an Jiaotong University, China



30.08.2017 - 01.09.2017

I. Institute of Physics, RWTH Aachen, Germany

Image available on wikimedia commons. Author: Nima j72

Non-Volatile Memory Technology Symposium 2017

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