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Technical Program

 

Here you find a list of all talks, invited to NVMTS 2017.

 

Session 1 – FLASH / RRAM

August 30      2017     Wednesday       9:30 – 11:25 AM

 

Keynote

 

9:30 - 10:10

 

Phase-Change Memory Cell Architectures and Storage Class Memory Applications

Fabio Pellizzer1 and Agostino Pirovano2

1 Micron Technology, Boise (Idaho), United States
2 Micron Technology, Vimercate (MB), Italy

 

 

F - 01

 

10:10 - 10:35

 

3D Nand Flash Memories: Array Architectures and Scaling/Reliability Challenges

Rino Micheloni

Microsemi Corporation, Vimercate, Italy

 

 

F - 02

 

10:35 - 11:00

 

RRAM device operation investigated using in-situ TEM

Masashi Arita, Atsushi Tsurumaki-Fukuchi, Yasuo Takahashi

Hokkaido University, Sapporo, Japan

 

 

F - 03

 

11:00 - 11:25

 

A Multiscale Modeling Approach for the Simulation of OxRRAM devices

Andrea Padovani1,2, Luca Larcher3

1 MDLab s.r.l. Reggio Emilia, Italy 2MDLSoft Inc.,Santa Clara
3 Università di Modena e Reggio Emilia, Italy

 

 

 

Session 2 – PCRAM I

August 30      2017     Wednesday       11:40 – 13:55 AM

 

PC - 01

 

11:40 - 12:05

 

Spatially Resolved Thermometry of PCM Devices

Eilam Yalon, Sanchit Deshmukh, Miguel Muñoz Rojo, and Eric Pop

Stanford University, USA

 

 

PC - 02

 

11:05 - 12:30

 

A Unified Phase Change Memory Model

Ali Gokirmak1, Zack Woods1, Jacob Scoggin1, Adam Cywar1, Nadim Ka’nan1, L’Hacene Adnane1, Sadid Muneer1, Gokhan Bakan1,2, Faruk Dirisaglik1,3, Nicholas Williams1, Azer Faraclas1, Mustafa Akbulut1, Zoila Jurado1, Lindsay Sullivan1, Kadir Cil1, Chung Lam4, Helena Silva1

1 University of Connecticut, Storrs, CT USA
2 Atilim  University, Ankara, Turkey
3 Eskisehir Osmangazi University, Eskisehir, Turkey
4 IBM T. J. Watson Research Center, USA

 

 

PC - 03

 

12:30 - 12:55

 

Switching Performance of the GeTe/Bi2Te3 Superlattice Based iPCM

Kirill V. Mitrofanov1, Yuta Saito1,2, Noriyuki Miyata1, Paul Fons1, Alexander V. Kolobov1 and Junji Tominaga1

1 National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan
2 Cambridge University, United Kingdom Corresponding

 

 

 

Session 3 – CBRAM

August 30      2017     Wednesday       2:05 – 3:20 PM

 

CB - 01

 

1:05-2:30

 

Enhancement of CBRAM Performance by Controlled Formation of a Hourglass-Shaped Filament 

Attilio Belmonte1, Ludovic Goux1, Jiyong Woo1,2, Umberto Celano1, Augusto Redolfi1, Sergiu Clima1, Gouri Sankar Kar1

1 imec, Leuven, Belgium
2 Pohang University of Science and Technology, Pohang, South Korea

 

 

CB - 02

 

2:30-2:55

 

Tradeoff and perspectives for filamentary RRAM memories

Etienne Nowak, Cécile Nail, Alessandro Grossi, Gabriel Molas, Carlo Cagli, Luca Perniola

CEA, LETI, Grenoble, France

 

 

CB - 03

 

2:55-3:20

 

Mapping the Metal-Insulator Transition in a NbO2 Selector with Scanning TEM Ebic

B. C. Regan1, Toyanath Joshi2, Matthew Mecklenburg3, Brian Zutter1, Pavel Borisov2, and David Lederman2,4, William A. Hubbard1

1 University of California, Los Angeles, USA
2 West Virginia University, Morgantown, USA
3 University of Southern California, Los Angeles, USA
4University of California, Santa Cruz, USA

 

 

 

Session 4 – MRAM / FERAM

August 31      2017     Thursday     8:30 – 10:25 AM

 

Keynote

 

8:30-9:10

 

Embedded STT-MRAM Technology toward Mass Production

G. H. Koh, Y. J. Song, S. O. Park, K. H. Hwang, G. Jeong, K. P. Lee, and H. K. Kang

Samsung Electronics Co. Ltd, Hwasung, Korea

 

 

MR - 01

 

9:10-9:35

 

Atom-thick tungsten engineered perpendicular magnetic tunnel junctions for large density STT-MRAM

Wenlong Cai1, Mengxing Wang1, Kaihua Cao1, Jiaqi Zhou1, Shouzhong Peng1, Huaiwen Yang1, Anni Cao1, Jiaqi Wei1, Wang Kang1, Jerzy Wrona2, Berthold Ocker2, Juergen Langer2, Albert Fert1,3, Weisheng Zhao1,

1 Beihang University, Beijing, China.
2 Singulus Technologies, Kahl am Main, Germany.
3 CNRS, Univ. Paris-Sud, Universit´e Paris-Saclay, France.

 

 

MR - 02

 

9:35-10:00

 

Ferroelectric Materials based on Hafnium Oxide for Non-Volatile Memories

T. Mikolajick1,2, T. Schenk1, T. Mittmann1, M. Hoffmann1, B.Max2, C. Richter1, M. Pešić1, F. Fengler1, H. Mulaosmanovic1 , M.-H. Park1, S. Slesazeck1, U. Schroeder1, J. Müller3, P Polakowski3, S. Müller4,  R.Materlik5, A. Kersch5

1 NaMLab gGmbH, Dresden, Germany.
2 TU Dresden, Germany.
3 Fraunhofer IPMS-CNT, Dresden, Germany.
4 FMC GmbH, Dresden, Germany.
5 Munich University of Applied Sciences, Germany.

 

 

MR - 03

 

10:00-10:25

 

Universal pathway of ferroelectric phase evolution in doped HfO2

Akira Toriumi1, Lun Xu1, and Shinji Migita2

1 University of Tokyo, Japan
2 AIST, Tsukuba, Japan

 

 

 

Session 5 – PCRAM II

August 31     2017                 Thursday      10:40 – 12:20 AM

 

PC - 04

 

10:40-11:05

 

Phase Change Materials by Design: The Mystery of Resonance Bonding

M. Wuttig

RWTH Aachen University of Technology, Germany

 

 

PC - 05

 

11:05-11:30

 

Confined Phase Change Memory for M-type Storage Class Memory

W. Kim1, M. BrightSky1, T. Masuda2, S. Kim1, R. Bruce1, F. Carta1, G. Fraczak1, A. Ray1, Y. Zhu1, K. Suu2 and C. Lam1

1IBM T. J. Watson Research Center, USA
2ULVAC, Inc., Shizuoka, Japan

 

 

PC - 06

 

11:30-11:55

 

Ti-Sb-Te Phase Change Material and Memory Chip

Zhitang, Song

Chinese Academy of Sciences, Shanghai, China.

 

 

PC - 07

 

11:55-12:20

 

Self-healing of a confined phase change memory device with a metallic surfactant layer

Yujun, Xie1, Wanki, Kim2, Yerin Kim3 Matt, BrightSky2, Chung, Lam2, Yu Zhu2, Judy.J Cha1

1 Yale University, New Haven, United States
2 IBM T. J. Watson Research Center, USA

 

 

 

Session 6 – RRAM I

August 31      2017     Thursday          1:30 – 2:45 PM

 

RR - 01

 

1:30-1:55

 

Uncovering switching and Failure Mechanisms in Memristive Devices by In-Operando Sprectromicroscopy

Regina Dittmann, Christoph Bäumer

Forschungszentrum Jülich GmbH, Germany

 

 

RR - 02

 

1:55-2:20

 

Measuring and Analyzing Random Telegraph Noise in Nanoscale Devices: The Case of Resistive Random Access Memories

Francesco Maria Puglisi

Università di Modena e Reggio Emilia, Italy

 

 

RR - 03

 

2:20-2:45

 

Optical Detection and Modulation with Atomic-Scale Conductive Bridging RAM (CBRAM) Cells

Mathieu Luisier1, Alexandros Emboras1, Fabian Ducry1, Samuel Andermatt1, Bojun Cheng1, Ping Ma1, Yannick Salamin1, Thomas Schimmel3, and Jürg Leuthold1

1 ETH Zurich, Switzerland
2 Karlsruhe Institute of Technology, Germany

 

 

 

Session 7 – Neuromorphic

September 01     2017     Friday     8:30 – 10:25 AM

 

Keynote

 

8:30-9:10

 

Applications of phase-change memory in brain-inspired computing

Abu Sebastian

IBM Research, Zurich, Switzerland

 

 

N - 01

 

9:10-9:35

 

HfO2 RRAM as Electronic Synapses for Neuromorphic Computing

S. Spiga1, S. Brivio1, E. Covi1, J, Frascaroli1, D. Conti2,3, R. George,2 M.V. Nair2, C. Ricciardi,3 G. Indiveri2

1 CNR - IMM, Agrate Brianza, Italy
2 University of Zürich and ETH, Switzerland
3 DISAT - Applied Science and Technology Department, Torino, Italy

 

 

N - 02

 

9:35-10:00

 

A Large-scale Neuromorphic Chip with Distributed PCRAM

Jing Pei1, Zhenzhi Wu1, Wei He1, Zhitang Song2, Luping Shi1

1 Tsinghua University, Beijing, 100084, P. R. China
2 Chinese Academy of Sciences, Shanghai, China

 

 

N - 03

 

10:00-10:25

 

Controlling Ionic Transport in RRAM for Neuromorphic Computing Applications

Jihang Lee, Yeonjoo Jeong, Wei D. Lu 

University of Michigan, USA

 

 

 

Session 8 – RRAM II

September 01       2017      Friday         10:40 – 12:20 AM

 

RR - 04

 

10:40-11:05

 

Memory Advanced Demonstrator (MAD) for BEOL NVM benchmark and assessment

Jean Coignus, Carlo Cagli, Gilles Reimbold, Etienne Nowak and Luca Perniola

CEA, LETI, Grenoble, France

 

 

RR - 05

 

11:05-11:30

 

Reduction of Cycle-to-Cycle Variability in ReRAM by Artificially-Induced Filamentary Refresh

K. Ohmori1, A. Shinoda1, K. Kawai2, Z. Wei2, T. Mikawa2, and R. Hasunuma3

1 Device Lab Inc., Ibaraki, Japan
2 Panasonic Semiconductor Solutions, Kyoto, Japan
3University of Tsukuba, Ibaraki, Japan

 

 

RR - 06

 

11:30-11:55

 

Role of Electron and Hole Injection in Electroforming of SiO2 and HfO2 RRAM Cells

Alexander Shluger1,2, David Z. Gao1, Jack Strand1, Moloud Kaviani2, Adnan Mehonic1, and Anthony Kenyon1

1 University College London, UK
2 Tohoku University, Sendai, Japan

 

 

RR - 07

 

11:55-12:20

 

Modelling of Resistive Switching Devices based on the Valence Change Mechanism

S. Menzel1, C. Funck2, C. La Torre2, A. Marchewka2, K. Fleck2, C. Bäumer1, V. Rana1, S. Hoffmann-Eifert1, R. Dittmann1, R. Waser1,2

1 Forschungszentrum Jülich, Germany
2 RWTH Aachen, Germany

 

 

 

Session 9 – New Applications

September 01       2017      Friday         1:30 – 2:45 PM

 

NA - 01

 

1:30-1:55

 

16Mb Resistive Random Access Memory Chip Implementation and its Applications

Huaqiang Wu, Dong Wu, Bin Gao, Yachuan Pang, Ning Deng and He Qian

Tsinghua University, Beijing, China

 

 

NA - 02

 

1:55-2:20

 

Threshold Switching and Electro-Formation in TaOx-Based RRAM

Marek Skowronski1, Dasheng Li1, Yuanzhi Ma1, Jonathan Goodwill1, James A. Bain1 and A. A. Herzing2 

1 Carnegie Mellon university, Pittsburgh, USA
2 National Inst. Standards and Technology, Gaithersburg, USA

 

 

NA - 03

 

2:20-2:45

 

Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM

Milan Pešić1, Michael Hoffmann1, Claudia Richter1, Stefan Slesazeck1, Thomas Mikolajick1,2, Uwe Schroeder1

1 NaMLab gGmbH, Dresden, Germany
2 Technische Universität Dresden, Germany

 

  

Conference


30.08.2017 - 01.09.2017

I. Institute of Physics, RWTH Aachen, Germany

Image available on wikimedia commons. Author: Nima j72

Non-Volatile Memory Technology Symposium 2017

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