Poster Sessions
The poster contributions are divided in two poster sessions. The splitting is done by last
names in alphabetical order. Please put up your poster on the date of the session between
9:00 AM and 2:30 PM and take it down until 6 PM, right after the session.
1. Poster Session (contributions with presenter-last names beginning with A-O)
Wednesday August 30, 3:30 – 5:00 PM
2. Poster Session (contributions with presenter-last names beginning with P-Z)
Thursday August 31, 3:00 – 5:00 PM
Awards will be given for the top three posters regarding presentation, technical quality and impact. Members of the conference committee will judge the posters during the session.
Posters should be of DIN-A0 size in portrait orientation.
Poster Session – 1
August 30 2017 Wednesday 3:00 – 5:00 PM
P1 - 01 |
High Speed and High-Area Efficiency Non-Volatile Look-Up Table Design
Rana Alhalabi1, Gregory Di Pendina2, Etienne Nowak1, Ioan-lucian Prejbeanu2, Luca Perniola1
1CEA LETI, Grenoble, France 2Univ. Grenoble Alpes, France
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P1 - 02 |
Controlling growth of Materials and structure for resistive memory using combinatorial synthesis and high-throughput screening methodologies
Mabkhoot, Alsaiari1, Brian, Hayden2
1 Najran University, Sharurah, KSA 2 Southampton University, Southampton, UK
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P1 - 03 |
Cross Effects of Endurance and Retention Time in STT-RAM based Last Level Cache
Fatemeh Arezoomand1, Mahdi Fazeli1, Mahmood Fathy1, Mohammad Taher Hallaj Shoushtari 2
1 Iran University of Science & Technology, Tehran, Iran 2 Science and Research branch of Islamic Azad University, Tehran, Iran
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P1 - 04 |
A Multi-Memristive Synaptic Architecture and Experimental Demonstrations
I. Boybat1, 2, M. Le Gallo1, 3, S. R. Nandakumar1, 4, T. Moraitis1, T. Tuma1, Y. Leblebici2, A. Sebastian1 and E. Eleftheriou1
1 IBM – Research Zurich, Rüschlikon, Switzerland 2 EPFL, Lausanne, Switzerland 3 ETH Zurich, Zurich, Switzerland 4 NJIT, Newark, NJ, USA
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P1 - 05 |
EXPLOITING THE POTENTIAL OF ADVANCED PHASE CHANGE MATERIAL EPITAXIAL STRUCTURES
Raffaella Calarco, Stefano Cecchi, Jos E. Boschker, Eugenio Zallo
Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany
|
P1 - 06 |
Improvement of Electrical Characteristics of SiO2/ZrO2 Hybrid tunnel Oxide for Charge Trap Flash Memory
Jaeho Choi1,2, Ilsub Jung1
1 Colleague of Information and Communication Engineering, Sungkyunkwan University, Suwon, Korea 2 Department of Process Development 2 Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi, Korea
|
P1 - 07 |
Nanosized conducting filaments formed by atomic-scale defects in Fe-doped SrTiO3 thin-film resistive switching memories
Hongchu Du1,2, Chun-Lin Jia1,3,4, Annemarie Koehl3, Juri Barthel1,2, Regina Dittmann3, Rainer Waser3,5,6, and Joachim Mayer1,2,6
1 Forschungszentrum Jülich GmbH, Juelich, Germany 2RWTH Aachen University, Aachen, Germany 3Peter Grünberg Institute, Jülich, Germany 4Xi’an Jiaotong University, Xi'an, China 5RWTH Aachen University, Aachen, Germany 6Jülich-Aachen Research Alliance, (JARA-FIT), Jülich-Aachen , Germany
|
P1 - 08 |
Endurance Prediction and Error Reduction in NAND Flash Using Machine Learning
Barry Fitzgerald1, Damien Hogan2, Jeannie Fitzgerald2, Joe Sullivan1, Conor Ryan3
1 Limerick Institute of Technology, Limerick, Ireland 2 NVMdurance Ltd, Limerick, Ireland 3 University of Limerick, Limerick, Ireland
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P1 - 09 |
Field-enhanced Ion Transport Revisited
Annalena R. Genreith-Schriever, Roger A. De Souza
RWTH Aachen University, Aachen, Germany
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P1 - 10 |
Investigation of oxygen vacancy formation and migration in HfO2 from density functional theory
Marta Gibertini, Daniel Wortmann, Gustav Bihlmayer, Shigeru Tsukamoto, Stefan Blügel
Forschungszentrum Jülich and JARA, Jülich, Germany
|
P1 - 11 |
Stoichiometry-dependence of resistive switching in amorphous gallium oxide
Philipp Hein, Manfred Martin
RWTH Aachen University, Institute of Physical Chemistry, Aachen, Germany
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P1 - 12 |
Switching behaviour of ZrOx-based bi-layer and tri-layer resistive memory
Ruomeng Huang1, Xingzhao Yan1, Reza Kashitiban2, Richard Beanland2, Katrina A Morgan1, Martin D B Charlton1 , C H (Kees) de Groot1
1 University of Southampton, Southampton, UK 2 University of Warwick, Coventry, UK
|
P1 - 13 |
SCANNING TEM EBIC OF SWITCHING IN Ti/HfO2/Pt VALENCE CHANGE MEMORY
William A. Hubbard, Jared Lodico, B.C. Regan
1Department of Physics & Astronomy and California NanoSystems Institute, University of California, Los Angeles, CA, USA
|
P1 - 14 |
Highly reliable controllability of quadruple-level-cell operation in HfO2 based resistive switching device
Gun Hwan Kim, Ji Woon Choi, Bo Keun Park, Jeong Hwan Han, Taek-Mo Chung, and Young Kuk Lee
Center for Thin-Film Materials, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-Ro, Yuseong-Gu, Daejeon 34114, Republic of Korea
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P1 - 15 |
INNOVATIVE GeS2/Sb2Te3 BASED PHASE-CHANGE MEMORY FOR LOW POWER APPLICATIONS
Julia Kluge1, 2, 3, Anthonin Verdy2, Gabriele Navarro2, Serge Blonkowski1, Véronique Sousa2, Philippe Kowalczyk2, Mathieu Bernard2, Nicolas Bernier2, Guillaume Bourgeois2, Niccolò Castellani2, Pierre Noé2 and Luca Perniola2
1 STMicroelectronics, Crolles, France. 2 CEA, LETI, Grenoble, France. 3 IMEP-LAHC, Minatec/INPG, 3Grenoble, France
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P1 - 16 |
Theoretical Analysis of Methyl-Ammine Lead-Tin Iodide based Resistive Memory
Yongwoo Kwon1, Hayoun Shim1, Kyoung-Hwan Min1, Nayoung Park2, Pil-Ryung Cha2
1 Hongik University, Seoul, Korea 2 Kookmin University, Seoul, Korea
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P1 - 17 |
Charge Transition of Oxygen Vacancy during Resistive Switching in Oxide-RRAM
Jihang Lee,1,2 William Schell,1 Xiaojian Zhu,1Emmanouil Kioupakis,2 Wei D. Lu1
1 Department of Electrical Engineering and Computer Science, University of Michigan, 2 Department of Materials Science and Engineering, University of Michigan, Ann Arbor, 48109, United States
|
P1 - 18 |
Infrared Near-field Spectroscopy of Free Charge Carriers at Grain Boundaries in Sr1-xLaxTiO3 Ceramics on the nm-Scale
Martin Lewin1,2, Fabian Gaussmann2, Jochen Wüppen2, Sebastian Nyga2, Bernd Jungbluth2, Alexander Schwedt4,5, Rainer Waser3, Joachim Mayer4,5
1RWTH Aachen University, Aachen, Germany 2Fraunhofer Institute for Laser Technology (ILT), Aachen, Germany 3RWTH Aachen University, Juelich Aachen Research Alliance, Aachen, Germany 4RWTH Aachen University, Aachen, Germany 5Ernst Ruska-Centre and JARA, Forschungszentrum Jülich GmbH, Jülich, Germany
|
P1 - 19 |
3D-Xpoint block device deployed in hyperscale infrastructure
Ping Zhou, Shu Li
Alibaba Infrastructure Service,Alibaba Group
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P1 - 20 |
Forming-free TaOx-based ReRAM Stack Prepared by Magnetron Sputtering Method
Yusuke Miyaguchi, Shun Manita, Hyung-Woo Ahn, Kazushi Fuse, Shunpei Ota and Takehito Jimbo
ULVAC, Inc. Susono, Shizuoka, Japan
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P1 - 21 |
Investigation of behaviour of cubic to hexagonal phase transition in Ge-Sb-Te based chalcogenide on silicon nitride passivation
Jinsu, Oh, Byeong-Seon, An, and Cheol-Woong, Yang
Sungkyunkwan University, Suwon, Korea
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Poster Session – 2
August 31 2017 Thursday 3:00 – 5:00 PM
P2 - 01 |
Study on Insulator - metal transition characteristics of NbO2 for selector device
Jaehyuk Park, Euijun Cha and Hyunsang Hwang*
Pohang University of Science and Technology, Pohang, Korea
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P2 - 02 |
MOTARO - a Fault-Tolerant NOR Flash Memory Controller for Embedded Systems
Patryk Skoncej, Oliver Schrape
IHP, Frankfurt (Oder), Germany
|
P2 - 03 |
FORMING-FREE, BIPOLAR RESISTIVE SWITCHING IN ZINC FERRITE THIN FILMS
Senthilkumar Rajarathinam1, Neeraj Panwar2, Pankaj Kumbhare2, Udayan Ganguly2 and N. Venkataramani1
1 Department of Metallurgical Engineering and Materials Science, 2 Indian Institute of Technology Bombay, Mumbai, India
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P2 - 04 |
High Temperature Retention Characteristics of TaOx ReRAM
Archana Dangwal1, 3, Wonjoo Kim1, Dirk J. Wouters2, Thomas Mikolajick3, Rainer Waser1, 2, Vikas Rana1
1 Forschungszentrum Jülich GmbH, Jülich, Germany 2IWE 2, RWTH Aachen University, Aachen, German 3Faculty of Electrical and Computer Engineering, TU Dresden Corresponding
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P2 - 05 |
Tuning the local conductivity of ALD-grown TiO2 ReRAM cells by Au nanoparticles
Christian Rodenbücher1, Nabeel Aslam1, Hehe Zhang1, Hongchu Du2, Dirk Mayer1, Susanne Hoffmann-Eifert1
1 Peter Grünberg Institute and JARA-FIT, Forschungszentrum Jülich, Germany 2 Ernst Ruska-Centre, Forschungszentrum Jülich, Germany
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P2 - 06 |
Crystallization of Phase-Change Materials from Molecular Dynamics Simulations
Ider Ronneberger1, Wei Zhang4, Martin Salinga1,3, Abu Sebastian3, Matthias Wuttig1 and Riccardo Mazzarello1
1 RWTH Aachen University, Aachen, Germany 3 IBM Research-Zurich, Rüschlikon, Switzerland 4 Xi'an Jiaotong University, Shaanxi, China |
P2 - 07 |
DIFFERENT TRANSPORT PROPERTIES AT VERY LOW TEMPERATURES BETWEEN SUBSTOICHIOMETRIC TaOx IN ReRAM CONDUCTIVE FILAMENTS AND IN THIN FILMS
Carlos M. M. Rosário1,2, Bo Thöner2, Alexander Schönhals2, Stephan Menzel3, Matthias Wuttig2, Rainer Waser2,3, Nikolai A. Sobolev1,4, Dirk J. Wouters2
1 University of Aveiro, Aveiro, Portugal 2 RWTH Aachen University, Aachen, Germany 3 Peter Grünberg Institute and JARA-FIT, Forschungszentrum Jülich, Germany 4 National University of Science and Technology “MISiS”, Moscow, Russia
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P2 - 08 |
Boundary formation in SrTiO3-TiO2 solid solutions
Konstantin Rushchanskii, Stefan Blügel, Marjana Ležaić
Forschungszentrum Jülich and JARA, Jülich, Germany
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P2 - 09 |
ELECTRICAL CONDUCTION IN AMORPHOUS PHASE CHANGE MATERIALS
Martin Salinga 1,2
1 IBM Research - Zurich, Rüschlikon, Switzerland 2 RWTH Aachen University, Aachen, Germany |
P2 - 10 |
Ultrafast threshold-switching dynamics in Ge2Sb2Te5 phase change memory device
Nishant, Saxena1, Chao, Chen2, Matthias, Wuttig2, Anbarasu, Manivannan1,*
1 Indian Institute of Technolgy Indore, Madhya Pradesh, India 2RWTH Aachen University, Aachen, Germany
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P2 - 11 |
Massive topological Dirac Semimetals from GeSbTe van-der-Waals Heterostructures
Peter C. Schmitz1, Wei Zhang2, Yuriy Mokrousov3 and Riccardo Mazzarello1
1RWTH Aachen, Germany 2Xian Jiaotong University, China 3Forschungszentrum Jülich, Germany
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P2 - 12 |
Array Programming Scheme to enable Improved Transient based Non-linearity in Impact Ionization based Si-NIPIN selectors for Low Power
S. Shrivastava, U. Ganguly
Dept of Electrical Engineering, Indian Institute of Technology, Bombay, India 400076
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P2 - 13 |
DOUBLE MgO/FeCoB INTERFACE FREE-LAYER FOR PERPENDICULAR MAGNETIC TUNNEL JUNCTIONS: EFFECT OF THICKNESS AND METALLIC SPACER
Bruno Teixeira1, Andrey Timopheev2,3,4, S. Auffret2,3,4,Ricardo C. Sousa2,3,4, Nikolai A. Sobolev1,5
1University of Aveiro, 3810-193 Aveiro, Portugal 2Univ. Grenoble Alpes, Grenoble, France 3 CEA, INAC-SPINTEC, Grenoble, France 4 CNRS, SPINTEC, Grenoble, France 5 National University of Science and Technology “MISiS”, Moscow, Russia
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P2 - 14 |
Inherent Simple Cubic Lattice Being Responsible for the Ultrafast Solid Phase Change of Ge2Sb2Te5
Wen-Xiong Song1,2, Zhi-Pan Liu2, Li-Min Liu1
1 Beijing Computational Science Research Center, Beijing, China 2 Fudan University, Shanghai, China
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P2 - 15 |
Kinetic Monte Carlo modeling of the charge transport in a HfO2-based ReRAM with a rough anode
Wilhelm Stehling1, Elhameh Abbaspour1, Stephan Menzel2, Christoph Jungemann1
1 RWTH Aachen University, Aachen, Germany 2 Forschungszentrum Jülich, Jülich, Germany
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P2 - 16 |
High-speed voltage-control spintronics memory focused on reduction in write-current
H. Sugiyama, H. Yoda, K. Koi, S. Oikawa, B. Altansargai, T. Inokuchi, S. Shirotori, M. Shimizu, Y. Kato, Y. Ohsawa, M. Ishikawa, A. Tiwari, Y. Kamiguchi, N. Shimomura, Y. Saito, and A. Kurobe
Corporate R & D Center, Toshiba Corporation, Kawasaki, Japan
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P2 - 17 |
Influence of structure and stoichiometry on oxygen diffusion and conductivity in gallium oxide thin films
Alexandra von der Heiden1, Manfred Martin1
1 RWTH Aachen University, Aachen, Germany
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P2 - 18 |
Thermal effects on the I-V characteristics of filamentary VCM based ReRAM-cells using a nanometer-sized heater
Moritz von Witzleben1, Karsten Fleck1, Carsten Funck1, Thomas Breuer2, Erik Wichmann1, Rainer Waser1,2, Ulrich Böttger1 and Stephan Menzel2
1 RWTH Aachen University, Aachen, Germany 2 Forschungszentrum Jülich, Jülich, Germany
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P2 - 19 |
Computational Study of Oxygen Diffusion along a[100] Dislocations
Stephan P. Waldow, Roger A. De Souza
RWTH Aachen University,Aachen, Germany
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P2 - 20 |
The Ovonic Cognitive Computer
Guy Wicker, Boil Pashmakov
Ovonic Cognitive Computer, Southfield, Michigan, USA
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P2 - 21 |
Transition between two switching polarities in TiO2 based ReRAM cells
Hehe Zhang1, Sijung Yoo3, Cheol Seong Hwang3, Camilla La Torre2, Stephan Menzel1, Dirk Wouters2, and Susanne Hoffmann-Eifert1
1 Forschungszentrum Jülich, Jülich, Germany 2 RWTH Aachen University, Aachen, Germany 3 Seoul National University, Seoul, Korea
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P2 - 22 |
Atom Probe Tomography of Phase Change Materials
Min Zhu1, Oana Cojocaru-Mirédin1, Antonio M. Mio1, Yuan Yu1, Ju-Young Cho1 and Matthias Wuttig1,2
1 RWTH Aachen University, Aachen, Germany 2JARA-FIT, Aachen, Germany
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P2 - 23 |
Highly Thermally Stable Magnetoelectric Composite
Andrei V. Turutin1,2, João V. Vidal1, Ilya V. Kubasov2, Mikhail D. Malinkovich2, Svetlana P. Kobeleva2, Yurii N. Parkhomenko2, Tianyu Ma3, Xiaobing Ren4,5, Andrei L. Kholkin1, Nikolai A. Sobolev1,2
1 University of Aveiro, Portugal 2 National University of Science and Technology “MISIS”, Moscow, Russia 3 Zhejiang University, Hangzhou, China 4 National Institute for Materials Science, Tsukuba, Japan 5 Frontier Institute of Science and Technology, Xi’an Jiaotong University, China
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Conference
30.08.2017 - 01.09.2017
I. Institute of Physics, RWTH Aachen, Germany
The conference will be held on the top floor of the SuperC building of the RWTH Aachen University.
Templergraben 57
52062 Aachen
Germany
The European Phase Change and Ovonics Symposium (E\PCOS) 2017 was also be held in Aachen.
Non-Volatile Memory Technology Symposium 2017
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- Last update: January 11, 2018, 13:30